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Contents

README

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TPS54116QRTWTQ1

Texas Instruments · Power Management Specialized - PMIC · WQFN-24-EP(4x4)

TPS54116QRTWTQ1 from Texas Instruments, in a WQFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SW output Switching node of the buck converter.
2 BOOT passive Bootstrap capacitor node for the high-side MOSFET gate driver; connect the bootstrap capacitor from this pin to the SW pin.
3 AVIN power_in Input supply to the IC powering the control circuits of both the buck converter and DDR termination regulator; connect to a supply between 2.95 V and 6 V.
4 ENSW input Buck converter enable with internal pull-up current source; floating enables the IC, below 1.17 V enters standby, below 0.4 V enters shutdown, and two resistors can set adjustable UVLO.
5 ENLDO input VTT LDO enable with internal pull-up current source; floating enables the IC, below 1.17 V enters standby, below 0.4 V enters shutdown, and two resistors can set adjustable UVLO.
6 PGOOD output Open-drain power good indicator for the buck regulator; a 10-kΩ pull-up to AVIN or an external logic supply is recommended.
7 VDDQSNS input VDDQ sense input used to generate the VDDQ/2 reference for VTTREF.
8 LDOIN power_in Power supply input for the VTT LDO, connected to VDDQ in the typical application or a lower voltage in split-rail configuration to reduce power dissipation.
9 VTT power_out 1-A LDO output; connect 2 x 10-µF ceramic capacitors to VTTGND for stability.
10 VTTGND power_in Power ground for the VTT LDO.
11 VTTSNS input VTT LDO voltage feedback.
12 VTTREF power_out Buffered low-noise VTT reference output; connect a 0.22 µF or larger ceramic capacitor to AGND for stability.
13 ILIM input Programmable current limit pin; the high-side MOSFET peak current limit is set by an external resistor to AGND.
14 AGND power_in Analog signal ground of the IC; connect to PGND at a single point on the PCB, typically at the thermal pad.
15 FB input Error amplifier inverting input for buck voltage regulation; connect to the center of a resistor divider from the output voltage to AGND.
16 COMP passive Output of the internal transconductance error amplifier for the buck converter; the loop compensation network is connected from this pin to AGND.
17 SS/TRK passive Soft-start programming pin; a capacitor to AGND sets the soft-start time, and its voltage overrides the internal reference for tracking and sequencing.
18 RT/SYNC input Resistor timing and external clock pin; a resistor to AGND sets the switching frequency, and pulling above the upper threshold switches it to a synchronization clock input.
19 PGND power_in Power ground of the buck regulator; connect to AGND at a single point on the PCB, typically at the thermal pad.
20 PGND power_in Power ground of the buck regulator; connect to AGND at a single point on the PCB, typically at the thermal pad.
21 PVIN power_in Input supply for the power MOSFETs; connect to a supply between 2.95 V and 6 V.
22 PVIN power_in Input supply for the power MOSFETs; connect to a supply between 2.95 V and 6 V.
23 SW output Switching node of the buck converter.
24 SW output Switching node of the buck converter.
25 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WQFN-24-EP(4x4)
Category Power Supply Chip
Pins 25

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage AVIN, PVIN V(AVIN), V(PVIN) 2.95 6 V 5
Buck output voltage VOUT 0.6 4.5 V 5
Buck output current IOUT 0 4 A 5
VDDQSNS input voltage V(VDDQSNS) 1 3.5 V 5
LDOIN input voltage V(LDOIN) 3.5 V min is VTT + VDO 5
VTT and VTTREF output voltage V(VTT), V(VTTREF) 0.5 3.5 V 5
Abs max PVIN, AVIN, ENSW, ENLDO, PGOOD -0.3 7 V 4
Abs max FB, COMP, SS/TRK, ILIM -0.3 3 V 4
Abs max RT/SYNC voltage -0.3 6 V 4
Abs max BOOT with respect to SW -0.3 7 V 4
Abs max LDOIN, VTTSNS, VDDQSNS -0.3 3.6 V 4
Abs max SW -0.6 7 V 4
Abs max SW 10-ns transient -4 10 V 10-ns transient 4
Abs max VTT, VTTREF -0.3 3.6 V 4
Abs max RT/SYNC current -100 100 µA 4
Abs max PGOOD current -5 5 mA 4
Operating junction temperature TJ -40 150 °C 4
Storage temperature Tstg -65 150 °C 4
AVIN and PVIN operating 2.95 6 V 5
AVIN internal UVLO threshold 2.7 2.8 V AVIN rising 5
AVIN internal UVLO hysteresis 0.05 0.12 V 5
Iq shutdown Iq 1 3.5 µA V(ENSW) = V(ENLDO) = 0 V, V(VDDQSNS) = 1.8 V, TJ = 25°C 5
Iq operating, LDO and buck enabled Iq 650 800 µA V(ENSW) = V(ENLDO) = V(AVIN) = 5 V, V(FB) = 0.7 V, V(VDDQSNS) = 1.8 V, TJ = 25°C 5
Iq operating, LDO enabled, buck disabled Iq 190 300 µA V(ENLDO) = V(AVIN) = 5 V, V(ENSW) = 0 V, V(VDDQSNS) = 1.8 V, TJ = 25°C 5
Iq operating, LDO disabled, buck enabled Iq 570 700 µA V(ENSW) = V(AVIN) = 5 V, V(ENLDO) = 0 V, V(FB) = 0.7 V, V(VDDQSNS) = 1.8 V, TJ = 25°C 5
Voltage Reference VREF 0.594 0.6 0.606 V 6
Error Amp transconductance gmEA 260 360 µS -2 µA < I(COMP) < 2 µA, V(COMP) = 1 V 6
High side switch resistance 33 66 mΩ V(BOOT-SW) = 5 V 6
High side switch resistance 42 84 mΩ V(BOOT-SW) = 3.3 V 6
Low side switch resistance 25 50 mΩ V(PVIN) = 5 V 6
Low side switch resistance 30 60 mΩ V(PVIN) = 3.3 V 6
High-side FET current limit 5.2 6.6 8.2 A V(PVIN) = 6V, R(ILIM) = 100k 6
High-side FET current limit 1.5 3 3.8 A V(PVIN) = 6V, R(ILIM) = 200k 6
Switching frequency 370 400 430 kHz R(RT/SYNC) = 150 kΩ 6
Switching frequency 1910 2070 2230 kHz R(RT/SYNC) = 27 kΩ 6
Switching frequency 340 420 480 kHz V(RT/SYNC) > 2.2 V or V(RT/SYNC) < 0.35 V 6
SS/TRK charge current ISS 1.5 2.4 3.2 µA V(SS/TRK) > VSSTHR 6
PGOOD output high leakage 5 125 nA V(FB) = VREF, V(PGOOD) = 5.5 V 7
PGOOD on resistance 85 170 Ω V(AVIN) = 2.95 V 7
VDDQSNS input current 39 46 µA V(VDDQSNS) = 1.8 V 7
VTTREF tolerance V(VTTREF)TOL -18 18 mV /I(VTTREF)/ < 10 mA, V(VDDQSNS) = 1.8 V 7
VTTREF tolerance V(VTTREF)TOL -15 15 mV /I(VTTREF)/ < 10 mA, V(VDDQSNS) = 1.5 V 7
VTTREF tolerance V(VTTREF)TOL -12 12 mV /I(VTTREF)/ < 5 mA, V(VDDQSNS) = 1.2 V 7
VTT tolerance to VTTREF V(VTT)TOL -20 20 mV /I(VTT)/≤ 10 mA, 1.2 V ≤ V(VDDQSNS) ≤ 1.8 V 7
VTT tolerance to VTTREF V(VTT)TOL -30 30 mV /I(VTT)/≤ 1 A, 1.2 V ≤ V(VDDQSNS) ≤ 1.8 V 7
VTT tolerance to VTTREF V(VTT)TOL -40 40 mV /I(VTT)/≤ 1.5 A, 1.2 V ≤ V(VDDQSNS) ≤ 1.8 V 7
VTT source current limit I(VTT)SRC 1.5 2.5 A V(VDDQSNS) = 1.8 V, V(VTT) = V(VTTSNS) = 0.7 V 7
VTT sink current limit I(VTT)SNK 1.5 2.5 A V(VDDQSNS) = 1.8 V, V(VTT) = V(VTTSNS) = 1.1 V 7
VTTSNS input bias current I(VTTSNS)BIAS -0.1 0.1 µA 7
Thermal resistance junction-to-ambient RθJA 36.2 °C/W RTW (WQFN) 24 pins 5
Thermal resistance junction-to-case (top) RθJC(top) 35 °C/W 5
Thermal resistance junction-to-board RθJB 14.3 °C/W 5
Thermal resistance junction-to-case (bottom) RθJC(bot) 4.6 °C/W 5

CAD (KiCad official)

  • Symbol: TPS54116QRTWTQ1
  • Footprint: Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm
  • 3D model: WQFN-24-EP(4x4) (KiCad packages3D, STEP)
  • 3D model files: tps54116qrtwtq1-etched.step / tps54116qrtwtq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps54116qrtwtq1.step / tps54116qrtwtq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (41 pp, sha256 b4a1a1be1bccb59c, retrieved 2026-10-23, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF