component
HSU4103
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHSU4103
HUASHUO · MOSFETs · TO-252-2
HSU4103 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA. |
| 2 | D | passive | Drain (center lead stub and exposed mounting tab); drain-source voltage -40 V, continuous drain current -27 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current is -27 A and pulsed source current is -54 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | Printed as ±20 V | 1 | |
| Continuous Drain Current | ID | -27 | A | -VGS @ -10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -21 | A | -VGS @ -10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -54 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 40.9 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-28.6A (note 3) | 1 | ||
| Avalanche Current | IAS | -28.6 | A | 1 | |||
| Total Power Dissipation | PD | 35 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Surface mounted on 1 inch FR-4 board with 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 32 | mΩ | VGS=-10V, ID=-8A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 46 | mΩ | VGS=-4.5V, ID=-4A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -27 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -54 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.02 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 3.72 | V/℃ | 2 | |||
| Forward Transconductance | gfs | 10.7 | S | VDS=-5V, ID=-8A | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 11.5 | nC | VDS=-15V, VGS=-4.5V, ID=-1A | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 3.3 | nC | 2 | |||
| Turn-On Delay Time | Td(on) | 22 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 | ||
| Rise Time | Tr | 15.7 | ns | 2 | |||
| Turn-Off Delay Time | Td(off) | 59 | ns | 2 | |||
| Fall Time | Tf | 5.5 | ns | 2 | |||
| Input Capacitance | Ciss | 1415 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 134 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 102 | pF | 2 |
CAD (KiCad official)
- Symbol:
HSU4103 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
hsu4103-etched.step/hsu4103-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu4103.step/hsu4103.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
8e2d0ee29fe75334, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).