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Contents

README

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TPS62221DDCT

Texas Instruments · DC-DC Converters · SOT-23-5

TPS62221DDCT from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VI power_in Supply voltage pin, with a recommended range of 2.5 V to 6 V and an absolute maximum of 7.0 V.
2 GND power_in Ground pin, which is the network ground reference for all voltages on the device.
3 EN input Enable pin: pulling it to ground forces shutdown mode, pulling it to VIN enables the device, and the pin must be terminated.
4 FB input Feedback pin: connect directly to the output for fixed-voltage versions, or to an external resistor divider for the adjustable version.
5 SW bidirectional Switch pin connected to the inductor and the internal MOSFET switches, with voltage limits of -0.3 V to VI +0.3 V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-5
Category Power Management (PMIC)
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage on pin VI VI -0.3 7 V All voltage values with respect to network ground terminal 2
Voltages on pins SW, EN, FB -0.3 V Max is VI +0.3 V 2
Operating junction temperature range TJ -40 150 °C 2
Storage temperature Tstg -65 150 °C 2
Lead temperature (soldering) 260 °C 10 sec 2
Supply voltage VI 2.5 6 V 2
Output current IO 400 mA 2
Operating ambient temperature TA -40 85 °C 2
Operating junction temperature TJ -40 125 °C 2
Continuous power dissipation (DDC package) PD 400 mW TA ≤ 25°C; derating 4 mW/°C above TA = 25°C 2
Thermal resistance junction to ambient (5-pin Thin-SOT23) 250 °C/W 2
Input voltage range VI 2.5 6 V 3
Operating quiescent current IQ 15 25 µA IO = 0 mA, Device is not switching 3
Shutdown supply current 0.1 1 µA EN = GND 3
Undervoltage lockout threshold 1.5 2 V 3
EN high level input voltage V(EN) 1.3 V 3
EN low level input voltage V(EN) 0.4 V 3
EN input bias current I(EN) 0.01 0.1 µA EN = GND or VIN 3
P-channel MOSFET on-resistance rDS(on) 530 670 mΩ VI = VGS = 3.6 V 3
P-channel MOSFET on-resistance rDS(on) 670 850 mΩ VI = VGS = 2.5 V 3
N-channel MOSFET on-resistance rDS(on) 430 540 mΩ VI = VGS = 3.6 V 3
N-channel MOSFET on-resistance rDS(on) 530 660 mΩ VI = VGS = 2.5 V 3
P-channel leakage current Ilkg 0.1 1 µA VDS = 6 V 3
N-channel leakage current I(LIM) 0.1 1 µA VDS = 6 V 3
P-channel current limit I(LIM) 600 670 880 mA 2.5 V < VI < 6 V 3
Switching frequency fS 0.8 1.25 1.85 MHz 3
Reference voltage Vref 500 mV 3
Feedback voltage accuracy, fixed 1.5 V VO 0 3 % VI = 2.5 V to 6 V, IO = 0 mA 3
Feedback voltage accuracy, fixed 1.5 V VO -3 3 % VI = 2.5 V to 6 V, 0 mA ≤ IO ≤ 400 mA 3
Line regulation 0.26 %/V VI = 2.5 V to 6 V, IO = 10 mA 4
Load regulation 0.0014 %/mA IO = 100 mA to 400 mA 4
Leakage current into SW pin Ilkg 0.1 1 µA VI > VO, 0 V ≤ V(SW) ≤ VI 4
Reverse leakage current into pin SW 0.1 1 µA VI = open, EN = GND, V(SW) = 6 V 4

CAD (KiCad official)

  • Symbol: TPS62221DDCT
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: tps62221ddct-etched.step / tps62221ddct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps62221ddct.step / tps62221ddct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (30 pp, sha256 a96203d0a1845c5a, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF