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SQM120P06-07L_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQM120P06-07L_GE3
Vishay Intertech · MOSFETs · TO-263
SQM120P06-07L_GE3 from Vishay Intertech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V. |
| 2 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is -60 V and continuous drain current is -120 A at TC = 25 °C (-98 A at TC = 125 °C). |
| 3 | S | passive | Source of the P-channel MOSFET; continuous source (diode conduction) current is -120 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -120 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -98 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -120 | A | 1 | |||
| Pulsed Drain Current | IDM | -480 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | -80 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 320 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 375 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 125 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | °C/W | PCB Mount | 1 | ||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 0.4 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = -60 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = -60 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VGS = 0 V, VDS = -60 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -120 | A | VGS = -10 V, VDS -5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0056 | 0.0067 | Ω | VGS = -10 V, ID = -30 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.011 | Ω | VGS = -10 V, ID = -30 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.013 | Ω | VGS = -10 V, ID = -30 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.007 | 0.0088 | Ω | VGS = -4.5 V, ID = -20 A | 2 | |
| Input Capacitance | Ciss | 11423 | 14280 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 1034 | 1295 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 809 | 1015 | pF | VGS = 0 V, VDS = -25 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 180 | 270 | nC | VGS = -10 V, VDS = -30 V, ID = -110 A | 2 | |
| Gate Resistance | Rg | 1.1 | 2.27 | 3.5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 15 | 23 | ns | VDD = -30 V, RL = 0.27 Ω, ID ≅ -110 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 23 | 35 | ns | VDD = -30 V, RL = 0.27 Ω, ID ≅ -110 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 97 | 146 | ns | VDD = -30 V, RL = 0.27 Ω, ID ≅ -110 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 32 | 48 | ns | VDD = -30 V, RL = 0.27 Ω, ID ≅ -110 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Pulsed Current | ISM | -480 | A | 2 | |||
| Forward Voltage | VSD | -0.95 | -1.5 | V | IF = -100 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
SQM120P06-07L_GE3 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
sqm120p06-07l-ge3-etched.step/sqm120p06-07l-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sqm120p06-07l-ge3.step/sqm120p06-07l-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
578e97d8925f73c3, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).