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SI3473CDV-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SI3473CDV-T1-GE3

Vishay Intertech · MOSFETs · TSOP-6

SI3473CDV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the P-channel MOSFET; pins 1, 2, 5 and 6 are the drain and are connected together, with a drain-source voltage rating of -12 V.
2 D passive Drain of the P-channel MOSFET; pins 1, 2, 5 and 6 are the drain and are connected together, with a drain-source voltage rating of -12 V.
3 G input Gate of the P-channel MOSFET; the absolute maximum gate-source voltage is ±8 V.
4 S passive Source of the P-channel MOSFET, the reference terminal for the gate-source voltage (VGS).
5 D passive Drain of the P-channel MOSFET; pins 1, 2, 5 and 6 are the drain and are connected together, with a drain-source voltage rating of -12 V.
6 D passive Drain of the P-channel MOSFET; pins 1, 2, 5 and 6 are the drain and are connected together, with a drain-source voltage rating of -12 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -12 V 1
Gate-source voltage VGS -8 8 V 1
Continuous drain current ID -8 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID -6.5 A TJ = 150 °C, TA = 70 °C 1
Pulsed drain current IDM -20 A 1
Continuous source-drain diode current IS -3.5 A TC = 25 °C 1
Continuous source-drain diode current IS -1.67 A TA = 25 °C 1
Maximum power dissipation PD 4.2 W TC = 25 °C 1
Maximum power dissipation PD 2.7 W TC = 70 °C 1
Maximum power dissipation PD 2 W TA = 25 °C 1
Maximum power dissipation PD 1.3 W TA = 70 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 55 62.5 °C/W t ≤ 5 s, surface mounted 1
Maximum junction-to-ambient RthJA 110 °C/W steady state (note d) 1
Maximum junction-to-foot (drain) RthJF 25 30 °C/W steady state 1
Drain-source breakdown voltage VDS -12 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -12 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -10 μA VDS = -12 V, VGS = 0 V, TJ = 85 °C 2
On-state drain current ID(on) -20 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-source on-state resistance RDS(on) 0.016 0.022 Ω VGS = -4.5 V, ID = -8.1 A 2
Drain-source on-state resistance RDS(on) 0.021 0.028 Ω VGS = -2.5 V, ID = -7.1 A 2
Drain-source on-state resistance RDS(on) 0.026 0.036 Ω VGS = -1.8 V, ID = -2.8 A 2
Total gate charge Qg 43 65 nC VDS = -6 V, VGS = -8 V, ID = -8.1 A 2
Total gate charge Qg 26 40 nC VDS = -6 V, VGS = -4.5 V, ID = -8.1 A 2
Turn-on delay time td(on) 20 30 ns VDD = -6 V, RL = 0.92 Ω, ID -6.5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise time tr 55 85 ns VDD = -6 V, RL = 0.92 Ω, ID -6.5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 60 90 ns VDD = -6 V, RL = 0.92 Ω, ID -6.5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall time tf 40 60 ns VDD = -6 V, RL = 0.92 Ω, ID -6.5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-on delay time td(on) 10 15 ns VDD = -6 V, RL = 0.92 Ω, ID -6.5 A, VGEN = -8 V, Rg = 1 Ω 2
Rise time tr 15 25 ns VDD = -6 V, RL = 0.92 Ω, ID -6.5 A, VGEN = -8 V, Rg = 1 Ω 2
Turn-off delay time td(off) 62 95 ns VDD = -6 V, RL = 0.92 Ω, ID -6.5 A, VGEN = -8 V, Rg = 1 Ω 2
Fall time tf 35 55 ns VDD = -6 V, RL = 0.92 Ω, ID -6.5 A, VGEN = -8 V, Rg = 1 Ω 2
Continuous source-drain diode current IS -3.5 A TC = 25 °C 2
Pulse diode forward current ISM -20 A 2
Body diode voltage VSD -0.8 -1.2 V IS = -5.9 A 2
Body diode reverse recovery time trr 50 75 ns IF = -6.5 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 30 45 nC IF = -6.5 A, di/dt = 100 A/μs, TJ = 25 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pins 1,2,5, and 6. The copper plane connects the drain pins 8

CAD (KiCad official)

  • Symbol: SI3473CDV-T1-GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3473cdv-t1-ge3-etched.step / si3473cdv-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3473cdv-t1-ge3.step / si3473cdv-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (11 pp, sha256 76b09ff16619548a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF