HC3M0060065K from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Drain	passive	Drain terminal, also the TAB, rated for VDSS 650 V at TC = 25 ˚C.
2	Power Source	passive	Main power source terminal carrying the load current of the MOSFET.
3	Driver Source	passive	Separate driver source pin for the gate drive return, optimized to keep the gate loop apart from the power current.
4	Gate	input	Gate control input with recommended turn-on voltage 15 V and turn-off voltage -4 V; transient range -8/+19 V under events shorter than 100 ns.

Key specifications

Parameter	Value
Manufacturer	HXY MOSFET
Package	TO-247-4L
Category	Triode/MOS Tube/Transistor
Pins	4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain - Source Voltage, TC = 25 C	VDSS			650	V	TC = 25 C	1
Gate - Source voltage (transient)	VGS	-8		19	V	Under transient events < 100 ns	1
Continuous Drain Current	ID			37	A	VGS = 15 V, TC = 25 C	1
Continuous Drain Current	ID			27	A	VGS = 15 V, TC = 100 C	1
Pulsed Drain Current	ID(pulse)			99	A	Pulse width tP limited by Tjmax	1
Power Dissipation	PD			150	W	TC=25 C, TJ = 175 C	1
Operating Junction and Storage Temperature	TJ, Tstg	-40		175	C		1
Solder Temperature	TL			260	C	1.6mm (0.063in) from case for 10s	1
Mounting Torque	Md			1	Nm	M3 or 6-32 screw	1
Mounting Torque	Md			8.8	lbf-in	M3 or 6-32 screw	1
Drain-Source Breakdown Voltage	V(BR)DSS	650			V	VGS = 0 V, ID = 100 μA	2
Gate Threshold Voltage	VGS(th)	1.8	2.3	3.6	V	VDS = VGS, ID = 5 mA, Fig. 11	2
Gate Threshold Voltage at TJ = 175C	VGS(th)		1.9		V	VDS = VGS, ID = 5 mA, TJ = 175ºC	2
Zero Gate Voltage Drain Current	IDSS		1	50	μA	VDS = 650 V, VGS = 0 V	2
Gate-Source Leakage Current	IGSS		10	250	nA	VGS = 15 V, VDS = 0 V	2
Drain-Source On-State Resistance	RDS(on)	42	60	79	mΩ	VGS = 15 V, ID = 13.2 A, Fig. 4, 5,6	2
Drain-Source On-State Resistance at TJ = 175C	RDS(on)		80		mΩ	VGS = 15 V, ID = 13.2 A, TJ = 175ºC	2
Transconductance	gfs		10		S	VDS= 20 V, IDS= 13.2 A, Fig. 7	2
Transconductance at TJ = 175C	gfs		9		S	VDS= 20 V, IDS= 13.2 A, TJ = 175ºC	2
Input Capacitance	Ciss		1020		pF	VGS = 0 V, VDS = 600 V, f = 1 MHz, VAC = 25 mV, Fig. 17, 18	2
Output Capacitance	Coss		80		pF	VGS = 0 V, VDS = 600 V, f = 1 MHz, VAC = 25 mV, Fig. 17, 18	2
Reverse Transfer Capacitance	Crss		9		pF	VGS = 0 V, VDS = 600 V, f = 1 MHz, VAC = 25 mV, Fig. 17, 18	2
Effective Output Capacitance (Energy Related)	Co(er)		95		pF	VGS = 0 V, VDS = 0V to 400 V	2
Effective Output Capacitance (Time Related)	Co(tr)		132		pF	VGS = 0 V, VDS = 0V to 400 V	2
Coss Stored Energy	Eoss		15		μJ	VDS = 600 V, 1 MHz, Fig. 16	2
Turn-On Switching Energy (Body Diode)	EON		70		μJ	VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC, FWD = Internal Body Diode of MOSFET, Fig. 25	2
Turn Off Switching Energy (Body Diode)	EOFF		5		μJ	VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC, FWD = Internal Body Diode of MOSFET, Fig. 25	2
Turn-On Switching Energy (External SiC Diode)	EON		67		μJ	VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC, FWD = External SiC Diode, Fig. 25	2
Turn Off Switching Energy (External SiC Diode)	EOFF		6		μJ	VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC, FWD = External SiC Diode, Fig. 25	2
Turn-On Delay Time	td(on)		8		ns	VDD = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH, Timing relative to VDS, Inductive load, Fig. 26	2
Rise Time	tr		11		ns	VDD = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH, Timing relative to VDS, Inductive load, Fig. 26	2
Turn-Off Delay Time	td(off)		17		ns	VDD = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH, Timing relative to VDS, Inductive load, Fig. 26	2
Fall Time	tf		5		ns	VDD = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH, Timing relative to VDS, Inductive load, Fig. 26	2
Internal Gate Resistance	RG(int)		3		Ω	f = 1 MHz, VAC = 25 mV	2
Gate to Source Charge	Qgs		13		nC	VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, Per IEC60747-8-4 pg 21	2
Gate to Drain Charge	Qgd		17		nC	VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, Fig. 12	2
Total Gate Charge	Qg		46		nC	VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, Per IEC60747-8-4 pg 21	2
Gate-Source Recommended Turn-On Voltage	VGSon		15		V	Static, Fig. 29	2
Gate-Source Recommended Turn-Off Voltage	VGSoff		-4		V	Static, Fig. 29	2
Diode Forward Voltage at TJ = 25 C	VSD		5.1		V	VGS = -4 V, ISD = 6.6 A, TJ = 25 °C, Fig. 8, 9, 10	3
Diode Forward Voltage at TJ = 175 C	VSD		4.8		V	VGS = -4 V, ISD = 6.6 A, TJ = 175 °C	3
Continuous Diode Forward Current	IS		23		A	VGS = -4 V, TC = 25C	3
Diode pulse Current	IS, pulse		99		A	VGS = -4 V, pulse width tP limited by Tjmax	3
Reverse Recover time (dif/dt = 4500 A/µs)	trr		11		ns	VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 4500 A/µs, TJ = 175 °C	3
Reverse Recovery Charge (dif/dt = 4500 A/µs)	Qrr		151		nC	VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 4500 A/µs, TJ = 175 °C	3
Peak Reverse Recovery Current (dif/dt = 4500 A/µs)	Irrm		27		A	VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 4500 A/µs, TJ = 175 °C	3
Reverse Recover time (dif/dt = 2400 A/µs)	trr		16		ns	VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 2400 A/µs, TJ = 175 °C	3
Reverse Recovery Charge (dif/dt = 2400 A/µs)	Qrr		110		nC	VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 2400 A/µs, TJ = 175 °C	3
Peak Reverse Recovery Current (dif/dt = 2400 A/µs)	Irrm		12		A	VGS = -4 V, ISD = 13.2 A, VR = 400 V, dif/dt = 2400 A/µs, TJ = 175 °C	3
Thermal Resistance from Junction to Case	RθJC		0.99		°C/W	Fig. 21	3
Thermal Resistance From Junction to Ambient	RθJA		40		°C/W		3

CAD (KiCad official)

Symbol: HC3M0060065K
Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
3D model: TO-247-4L (KiCad packages3D, STEP)
3D model files: hc3m0060065k-etched.step / hc3m0060065k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hc3m0060065k.step / hc3m0060065k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HXY MOSFET datasheet (12 pp, sha256 cf98f920ac53c591, retrieved 2026-11-02, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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HC3M0060065K

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3D Model

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