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NCE15TD60BF
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Wuxi NCE Power Semiconductor IGBTs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE15TD60BF
Wuxi NCE Power Semiconductor · IGBTs · TO-220F
NCE15TD60BF from Wuxi NCE Power Semiconductor, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the IGBT, with gate-emitter voltage rated at ±30 V maximum and threshold voltage of 4.0 V min to 6.0 V max at IC=1mA. |
| 2 | C | passive | Collector; collector-emitter voltage rated at 600 V maximum, with 15 A continuous collector current at TC=100 °C. |
| 3 | E | passive | Emitter; main current return terminal of the IGBT, with a co-packaged anti-parallel diode rated at 15 A continuous forward current at TC=100 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | 600 | V | 1 | |||
| Gate-Emitter Voltage | VGES | -30 | 30 | V | 1 | ||
| Collector Current | IC | 30 | A | TC = 25 °C | 1 | ||
| Collector Current | IC | 15 | A | TC = 100 °C | 1 | ||
| Pulsed Collector Current | ICplus | 45 | A | tp limited by Tjmax | 1 | ||
| Turn-off safe operating area | 45 | A | VCE=600V, Tj=150°C | 1 | |||
| Diode Continuous Forward Current | IF | 15 | A | TC = 100 °C | 1 | ||
| Diode Maximum Forward Current | IFM | 45 | A | 1 | |||
| Power Dissipation | PD | 34 | W | TC = 25 °C | 1 | ||
| Power Dissipation | PD | 13.6 | W | TC = 100 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | °C | 1 | ||
| Maximum Temperature for Soldering | TL | 260 | °C | 1 | |||
| Collector-Emitter Breakdown Voltage | V(BR)CES | 600 | V | VGE=0V,ICE=1mA | 2 | ||
| Collector-Emitter Leakage Current | ICES | 4 | uA | VGE =0V,VCE=600V | 2 | ||
| Gate to Emitter Forward Leakage | IGES(F) | 100 | nA | VGE=+30V,VCE=0V | 2 | ||
| Gate to Source Reverse Leakage | IGES(R) | 100 | nA | VGE=-30V,VCE =0V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.7 | 1.9 | V | IC=15A, VGE=15V, Tj=25°C | 2 | |
| Gate Threshold Voltage | VGE(th) | 4 | 6 | V | IC=1mA,VCE=VGE | 2 | |
| Diode Forward Voltage | VFM | 1.5 | 1.7 | V | IF=15A | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.9 | V | IC=15A, VGE=15V, Tj=100°C | 2 | ||
| Input Capacitance | Cies | 1635 | pF | VCE=25V,VGE=0V, f=1MHz | 2 | ||
| Output Capacitance | Coes | 50 | pF | VCE=25V,VGE=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Cres | 30 | pF | VCE=25V,VGE=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 63 | nC | VCC=480V, IC=15A, VGE=15V | 2 | ||
| Gate to Emitter Charge | Qge | 15 | nC | VCC=480V, IC=15A, VGE=15V | 2 | ||
| Gate to Collector Charge | Qgc | 26 | nC | VCC=480V, IC=15A, VGE=15V | 2 | ||
| Short circuit collector current | IC(SC) | 82 | A | VGE=15V,VCC≤400V, tSC≤3us,Tj≤150°C | 2 | ||
| Turn-on Delay Time | td(ON) | 16 | ns | VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load | 2 | ||
| Rise Time | tr | 12 | ns | VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load | 2 | ||
| Turn-Off Delay Time | td(OFF) | 124 | ns | VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load | 2 | ||
| Fall Time | tf | 12 | ns | VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load | 2 | ||
| Turn-On Switching Loss | Eon | 0.25 | mJ | VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load | 2 | ||
| Turn-Off Switching Loss | Eoff | 0.12 | mJ | VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load | 2 | ||
| Total Switching Loss | Ets | 0.37 | mJ | VCC=400V,IC=10A, VGE=0/15V, Rg=5Ω, inductive load | 2 | ||
| Reverse Recovery Time | Trr | 170 | ns | IF=15A, di/dt=200A/us | 2 | ||
| Diode Peak Reverse Recovery Current | IRRM | 6.5 | A | IF=15A, di/dt=200A/us | 2 | ||
| Reverse Recovery Charge | Qrr | 0.7 | uC | IF=15A, di/dt=200A/us | 2 | ||
| Thermal Resistance, Junction to case for IGBT | RθJC | 3.67 | °C/W | 2 | |||
| Thermal Resistance, Junction to case for Diode | RθJC | 3.97 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 78 | °C/W | 2 | |||
| Short circuit withstand time | tsc | 3 | us | VGE=15V, VCC≤400V, allowed number of short circuits <1000, time between short circuits ≥1.0s, Tj≤150°C | 1 |
CAD (KiCad official)
- Symbol:
NCE15TD60BF - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (10 pp, sha256
9b40865f9cd37c36, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).