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FDS4542-NL-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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FDS4542-NL-VB

VBsemi Elec · MOSFETs · SO-8

FDS4542-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, VDS 30 V, ID 8 A package limited at TC = 25 °C).
2 G1 input Gate of MOSFET 1 (N-channel), absolute maximum VGS ±20 V.
3 S2 passive Source of MOSFET 2 (P-channel, VDS -30 V, ID -8 A package limited at TC = 25 °C).
4 G2 input Gate of MOSFET 2 (P-channel), absolute maximum VGS ±20 V.
5 D2 passive Drain of MOSFET 2 (P-channel), pulsed drain current IDM -40 A; shorted internally to pin 6.
6 D2 passive Drain of MOSFET 2 (P-channel), pulsed drain current IDM -40 A; shorted internally to pin 5.
7 D1 passive Drain of MOSFET 1 (N-channel), pulsed drain current IDM 40 A; shorted internally to pin 8.
8 D1 passive Drain of MOSFET 1 (N-channel), pulsed drain current IDM 40 A; shorted internally to pin 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage N-Ch VDS 30 V TA = 25 °C, N-Ch 1
Drain-Source Voltage P-Ch VDS -30 V TA = 25 °C, P-Ch 1
Gate-Source Voltage VGS -20 20 V N-Ch and P-Ch 1
Continuous Drain Current N-Ch ID 8 A TJ = 150 °C, TC = 25 °C, N-Ch, package limited 1
Continuous Drain Current P-Ch ID -8 A TJ = 150 °C, TC = 25 °C, P-Ch, package limited 1
Pulsed Drain Current N-Ch IDM 40 A 10 µs pulse width, N-Ch 1
Pulsed Drain Current P-Ch IDM -40 A 10 µs pulse width, P-Ch 1
Source-Drain Diode Current N-Ch IS 2.6 A TC = 25 °C, N-Ch 1
Source-Drain Diode Current P-Ch IS -2.6 A TC = 25 °C, P-Ch 1
Single Pulse Avalanche Current N-Ch IAS 10 A L = 0.1 mH, N-Ch 1
Single Pulse Avalanche Current P-Ch IAS 20 A L = 0.1 mH, P-Ch 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance N-Ch RthJA 50 62.5 °C/W t ≤ 10 s, N-Ch 1
Junction-to-Ambient Thermal Resistance P-Ch RthJA 47 62.5 °C/W t ≤ 10 s, P-Ch 1
Junction-to-Foot Thermal Resistance N-Ch RthJF 30 40 °C/W Steady state, N-Ch 1
Junction-to-Foot Thermal Resistance P-Ch RthJF 29 38 °C/W Steady state, P-Ch 1
Drain-Source Breakdown Voltage N-Ch VDS 30 V VGS = 0 V, ID = 250 µA, N-Ch 2
Drain-Source Breakdown Voltage P-Ch VDS -30 V VGS = 0 V, ID = -250 µA, P-Ch 2
Gate Threshold Voltage N-Ch VGS(th) 1 2 V VDS = VGS, ID = 250 µA, N-Ch 2
Gate Threshold Voltage P-Ch VGS(th) -2 -1 V VDS = VGS, ID = -250 µA, P-Ch 2
Gate-Body Leakage N-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V, N-Ch 2
Gate-Body Leakage P-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V, P-Ch 2
Zero Gate Voltage Drain Current N-Ch IDSS 1 µA VDS = 30 V, VGS = 0 V, N-Ch 2
Zero Gate Voltage Drain Current P-Ch IDSS -1 µA VDS = -30 V, VGS = 0 V, P-Ch 2
Zero Gate Voltage Drain Current N-Ch hot IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch 2
Zero Gate Voltage Drain Current P-Ch hot IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C, P-Ch 2
On-State Drain Current N-Ch ID(on) 20 A VDS = 5 V, VGS = 10 V, N-Ch 2
On-State Drain Current P-Ch ID(on) -20 A VDS = -5 V, VGS = -10 V, P-Ch 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.04 Ω VGS = -10 V, ID = -8 A, P-Ch 2
Drain-Source On-State Resistance N-Ch RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A, N-Ch 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.044 Ω VGS = -8 V, ID = -6.5 A, P-Ch 2
Drain-Source On-State Resistance N-Ch RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A, N-Ch 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.05 Ω VGS = -4.5 V, ID = -5 A, P-Ch 2
Forward Transconductance N-Ch gfs 27 S VDS = 15 V, ID = 6.8 A, N-Ch 2
Forward Transconductance P-Ch gfs 25 S VDS = -15 V, ID = -6.7 A, P-Ch 2
Body Diode Voltage N-Ch VSD 0.81 1.2 V IS = 5.4 A, N-Ch 3
Body Diode Voltage P-Ch VSD -0.77 -1.2 V IS = -2 A, P-Ch 3
Pulse Diode Forward Current N-Ch ISM 40 A N-Ch 3
Pulse Diode Forward Current P-Ch ISM -40 A P-Ch 3

CAD (KiCad official)

  • Symbol: FDS4542-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds4542-nl-vb-etched.step / fds4542-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds4542-nl-vb.step / fds4542-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 faecb0836105d20e, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF