component

HYG065N15NS1B

Public Made by Adom

by adom

HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshyg065n15ns1bfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HYG065N15NS1B

HUAYI · MOSFETs · TO-263-2L

HYG065N15NS1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 2 V min to 4 V max at 250 µA.
2 D passive Drain, brought out on the exposed tab (the centre lead is not populated in the 2-lead package); 150 V drain-source rating and 165 A continuous at Tc=25°C.
3 S passive Source; carries body diode current up to 165 A continuous at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 150 V VGS=0V,IDS=250μA 2
Gate Threshold Voltage VGS(th) 2 3.2 4 V VDS=VGS, IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=150V,VGS=0V 2
Drain-to-Source Leakage Current at TJ=125°C IDSS 50 μA TJ=125°C 2
Gate-Source Leakage Current IGSS 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 6.2 7.5 mΩ VGS=10V,IDS=100A 2
Diode Forward Voltage VSD 0.93 1.3 V ISD=100A,VGS=0V 2
Drain-Source Voltage VDSS 150 V Tc=25°C unless otherwise noted 2
Gate-Source Voltage VGSS -20 20 V Tc=25°C unless otherwise noted 2
Maximum Junction Temperature TJ 175 °C Tc=25°C unless otherwise noted 2
Storage Temperature Range TSTG -55 175 °C Tc=25°C unless otherwise noted 2
Source Current-Continuous (Body Diode) IS 165 A Tc=25°C; mounted on large heat sink 2
Pulsed Drain Current IDM 580 A Tc=25°C; repetitive rating, pulse width limited by max. junction temperature 2
Continuous Drain Current ID 165 A Tc=25°C 2
Continuous Drain Current ID 116 A Tc=100°C 2
Maximum Power Dissipation PD 375 W Tc=25°C 2
Maximum Power Dissipation PD 187.5 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 1134 mJ L=0.3mH; limited by TJmax, starting TJ=25°C, VDS=100V, VGS=10V 2
Thermal Resistance, Junction-to-Case RJC 0.4 °C/W Junction-to-Case 2
Thermal Resistance, Junction-to-Ambient RJA 62 °C/W Surface mounted on FR-4 board 2

CAD (KiCad official)

  • Symbol: HYG065N15NS1B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: hyg065n15ns1b-etched.step / hyg065n15ns1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg065n15ns1b.step / hyg065n15ns1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 e079303c4d1addeb, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF