component
IRFML8244TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFML8244TRPBF
Infineon Technologies · MOSFETs · SOT-23
IRFML8244TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±20 V maximum, with a threshold voltage of 1.35 V min to 2.35 V max. |
| 2 | S | passive | Source; continuous body-diode current is 1.25 A maximum and the pulsed body-diode current is 24 A maximum. |
| 3 | D | passive | Drain; drain-source voltage is rated at 25 V maximum, with 5.8 A continuous drain current at TA = 25°C and 24 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 25 | V | 1 | |||
| Continuous Drain Current | ID | 5.8 | A | VGS @ 10V, TA = 25°C | 1 | ||
| Continuous Drain Current | ID | 4.6 | A | VGS @ 10V, TA = 70°C | 1 | ||
| Pulsed Drain Current | IDM | 24 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.01 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 25 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 20 | 24 | mΩ | VGS = 10V, ID = 5.8A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 32 | 41 | mΩ | VGS = 4.5V, ID = 4.6A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.7 | 2.35 | V | VDS = VGS, ID = 10μA | 2 |
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VDS = 20V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | μA | VDS = 20V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 10 | S | VDS = 10V, ID = 5.8A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | TJ = 25°C, IS = 5.8A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 11 | 17 | ns | TJ = 25°C, VR = 20V, IF = 5.8A | 2 | |
| Reverse Recovery Charge | Qrr | 4.2 | 6.3 | nC | TJ = 25°C, VR = 20V, IF = 5.8A, di/dt = 100A/μs | 2 | |
| Junction-to-Ambient | RθJA | 100 | °C/W | 1 | |||
| Junction-to-Ambient (t<10s) | RθJA | 99 | °C/W | t<10s | 1 |
CAD (KiCad official)
- Symbol:
IRFML8244TRPBF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irfml8244trpbf-etched.step/irfml8244trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfml8244trpbf.step/irfml8244trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
f321ee18fbe2523c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).