UCC28881D from Texas Instruments, in a SOIC-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	GND	power_in	Ground reference pin; all device voltages are specified with respect to GND.
2	GND	power_in	Ground reference pin; all device voltages are specified with respect to GND.
3	FB	input	Feedback terminal; absolute maximum rating is -0.3 V to 6 V.
4	VDD	power_out	Supply pin supplied by the internal LDO; absolute maximum rating is -0.3 V to 6 V, with 400 µA maximum current when supplied from a high-impedance source.
5	HVIN	power_in	High-voltage supply pin for the integrated current source; absolute maximum rating is -0.3 V to 700 V.
6	NC	unconnected	Not internally connected.
8	DRAIN	power_in	Drain pin of the integrated 14-Ω, 700-V power MOSFET; internally clamped with a 700 V rating and -700 mA maximum negative drain current.

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	SOIC-7
Category	Power Management (PMIC)
Pins	7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
HVIN voltage	HVIN	-0.3		700	V	TA = 25°C	4
DRAIN voltage	DRAIN			700	V	TA = 25°C	4
Positive drain current single pulse	IDRAIN			770	mA	single pulse, pulse max duration 25 μs	4
Negative drain current	IDRAIN	-700			mA		4
FB voltage	FB	-0.3		6	V		4
VDD voltage	VDD	-0.3		6	V	VDD is supplied from low impedance source	4
VDD supply current	IVDD			400	µA	VDD is supplied from high impedance source	4
Junction temperature	TJ			150	°C		4
Lead temperature				260	°C	1.6 mm (1/16 inch) from case 10 seconds	4
Storage temperature range	Tstg	-65		150	°C		4
Voltage on FB pin	VFB	-0.2		5	V		5
Operating junction temperature	TJ	-40		125	°C		5
Internally regulated low voltage supply	VVDD	4.5	5	5.5	V	supplied from HVIN pin	6
Internal supply current, no load	INL		58	100	µA	FB = 1.25 V (> VFB_TH)	6
Internal supply current, full load	IFL		86	120	µA	FB = 0.75 V (> VFB_TH)	6
Charging VDD cap current	ICH0	-3.8	-1.6	-0.4	mA	VVDD = 0 V	6
Charging VDD cap current	ICH1	-3.4	-1.3	-0.25	mA	VVDD = 4.4V, VFB = 1.25 V	6
FB pin reference threshold	VFB_TH	0.96	1.03	1.105	V		6
VDD turn-on threshold	VVDD(on)	3.55	3.92	4.28	V	VDD low-to-high	6
VDD turn-off threshold	VVDD(off)	3.28	3.62	3.89	V	VDD high-to-low	6
VDD UVLO Hysteresis	ΔVVDD(uvlo)	0.27	0.345	0.39	V	VDD high-to-low	6
Maximum Duty Cycle	DMAX	45		55	%	FB = 0.75 V	6
Current Limit static at TA = -40°C	ILIMIT			630	mA	Static, TA = -40°C	6
Current Limit static at TA = 25°C	ILIMIT	330	440	570	mA	Static, TA = 25°C	6
Current Limit static at TA = 125°C	ILIMIT	315			mA	Static, TA = 125°C	6
Thermal shutdown threshold	TJ(stop)	138.5		150	°C	Internal junction temperature	6
Thermal shutdown hysteresis	TJ(hyst)	37		45	°C	Internal junction temperature	6
Power MOSFET On-Resistance at 25°C	RDS(on)		14	18	Ω	ID = 60 mA, TJ = 25°C	6
Power MOSFET On-Resistance at 125°C	RDS(on)		24	30	Ω	ID = 60 mA, TJ = 125°C	6
Power MOSFET off state leakage current at 25°C	DRAIN_ILEAKAGE		5		µA	VDRAIN = 700V, TJ = 25°C	6
Power MOSFET off state leakage current at 125°C	DRAIN_ILEAKAGE		20		µA	VDRAIN = 400 V, TJ = 125°C	6
HVIN off state current at 25°C	HVIN_IOFF	4	7.5	36	µA	VHVIN = 700 V, TJ = 25°C, VVDD = 5.8 V	6
HVIN off state current at 125°C	HVIN_IOFF		20		µA	VHVIN = 400 V, TJ = 125°C, VVDD = 5.8 V	6
VDD clamp voltage	VVDD(clamp)	6	6.7	7.5	V	IVDD = 250 µA	6
Maximum switching frequency	fSW(max)	52	62	75	kHz		6
Maximum switch on time	tON_MAX	6.5	8.3	9.7	µs	current limiter not triggered, FB = 0.75 V	6
Minimum switch off time	tOFF_MIN	6.5	8.3	9.7	µs	follows every tON time, FB = 0.75 V	6
Minimum on time	tMIN	0.17	0.27	0.3	µs		6
Max off time (OL condition)	tOFF(ovl)	130	200	270	µs	OL condition, tOFF(ovl) = tSW, tON(max)	6
Minimum voltage to start-up	VHVIN(min)		30		V		6
Power MOSFET breakdown voltage	BV		700		V	TJ = 25°C	6
Inductor current run away protection time threshold	tON_TO		450		ns		6
Junction-to-ambient thermal resistance	RθJA		134.4		°C/W		5
Junction-to-case (top) thermal resistance	RθJC(top)		42.6		°C/W		5
Junction-to-board thermal resistance	RθJB		85		°C/W		5
Junction-to-top characterization parameter	ψJT		6.4		°C/W		5
Junction-to-board characterization parameter	ψJB		76		°C/W		5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts	copper		• Similarly, the copper area of the FB pin should be minimized to reduce coupling to feedback path. Loop CL	26

CAD (KiCad official)

Symbol: UCC28881D
Footprint: Package_SO:SOIC-8-N7_3.9x4.9mm_P1.27mm
3D model: SOIC-7 (KiCad packages3D, STEP)
3D model files: ucc28881d-etched.step / ucc28881d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ucc28881d.step / ucc28881d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (33 pp, sha256 1fba7780301ae99d, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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UCC28881D

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