component
TM4485
Public Made by Adomby adom
Tritech-MOS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM4485
Tritech-MOS · MOSFETs · SOP-8
TM4485 from Tritech-MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, which the datasheet rates for VDSS of -40 V and VGSS of ±25 V. |
| 2 | S | passive | Source of the P-channel MOSFET, which the datasheet rates for VDSS of -40 V and VGSS of ±25 V. |
| 3 | S | passive | Source of the P-channel MOSFET, which the datasheet rates for VDSS of -40 V and VGSS of ±25 V. |
| 4 | G | input | Gate of the P-channel MOSFET, with VGSS rated at ±25 V and VGS(th) of -1.0 V to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated at -11 A continuous drain current at TA=25°C with VGS=-10 V. |
| 6 | D | passive | Drain of the P-channel MOSFET, rated at -11 A continuous drain current at TA=25°C with VGS=-10 V. |
| 7 | D | passive | Drain of the P-channel MOSFET, rated at -11 A continuous drain current at TA=25°C with VGS=-10 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, rated at -11 A continuous drain current at TA=25°C with VGS=-10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 | V | 1 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | -11 | A | TA=25°C, VGS=-10V | 1 | ||
| Continuous Drain Current | ID | -9 | A | TA=70°C, VGS=-10V | 1 | ||
| Pulsed Drain Current | IDM | -15 | A | 300ms pulse, VGS=-10V | 1 | ||
| Diode Continuous Forward Current | IS | -3 | A | 1 | |||
| Avalanche Current, Single pulse | IAS | -33 | A | L=0.1mH | 1 | ||
| Avalanche Energy, Single pulse | EAS | 54 | mJ | L=0.1mH | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Maximum Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Diode Forward Voltage | VSD | -0.75 | -1 | V | ISD=-1A, VGS=0V | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, IDS=-250mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | mA | VDS=-32V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -30 | mA | VDS=-32V, VGS=0V, TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, IDS=-250mA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 15 | 19 | mW | VGS=-10V, IDS=-11A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 19.5 | 22 | mW | VGS=-4.5V, IDS=-7A | 2 | |
| Reverse Recovery Time | trr | 24 | ns | 2 | |||
| Reverse Recovery Charge | Qrr | 18 | nC | ISD=-11A, dlSD/dt=100A/ms | 2 | ||
| Gate Resistance | RG | 2.3 | W | VGS=0V, VDS=0V, F=1MHz | 2 | ||
| Input Capacitance | Ciss | 1500 | pF | 2 | |||
| Output Capacitance | Coss | 235 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 180 | pF | VGS=0V, VDS=-20V, Frequency=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 14 | ns | 2 | |||
| Turn-on Rise Time | tr | 12 | ns | 2 | |||
| Turn-off Delay Time | td(OFF) | 41 | ns | 2 | |||
| Turn-off Fall Time | tf | 22 | ns | VDD=-20V, RL=20W, IDS=-1A, VGEN=-10V, RG=6W | 2 | ||
| Total Gate Charge | Qg | 32 | nC | 2 | |||
| Gate-Source Charge | Qgs | 5.2 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 8 | nC | VDS=-20V, VGS=-10V, IDS=-11A | 2 | ||
| Thermal Resistance Junction to Ambient | RqJA | 40 | °C/W | t ≤ 10s | 1 | ||
| Thermal Resistance Junction to Ambient | RqJA | 75 | °C/W | Steady State | 1 | ||
| Thermal Resistance Junction to Lead | RqJL | 24 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
TM4485 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
tm4485-etched.step/tm4485-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm4485.step/tm4485.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech-MOS datasheet (7 pp, sha256
27008688fede9e2b, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).