component
RD3G07BBGTL1
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRD3G07BBGTL1
ROHM Semicon · MOSFETs · TO-252
RD3G07BBGTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is limited to ±20V (VGSS) with a threshold of 1.0 to 2.5V. |
| 2 | Drain | passive | Drain terminal (also the tab); drain-source voltage is rated at 40V (VDSS) with continuous drain current of ±70A at Tc=25°C. |
| 3 | Source | passive | Source terminal with body diode to drain; continuous forward current of 70A (IS) and forward voltage up to 1.2V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 40 | V | Ta=25°C | 1 | ||
| Continuous drain current, silicon limit | ID | -150 | 150 | A | VGS=10V, limited by silicon chip capability | 1 | |
| Continuous drain current | ID | -70 | 70 | A | Tc=25°C, VGS=10V, limited only by max temperature | 1 | |
| Pulsed drain current | IDP | -600 | 600 | A | Pw≤10μs, duty cycle≤1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche current, single pulse | IAS | 29 | A | L≈0.1mH, VDD=20V, RG=25Ω, starting Tj=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 63 | mJ | L≈0.1mH, VDD=20V, RG=25Ω, starting Tj=25°C | 1 | ||
| Power dissipation | PD | 89 | W | Tc=25°C, limited only by max temperature | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction-case | RthJC | 1.4 | °C/W | Tc=25°C | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | 40 | V | VGS=0V, ID=1mA | 2 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | 28.9 | mV/℃ | ID=1mA, referenced to 25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | 2 | μA | VDS=40V, VGS=0V | 2 | ||
| Gate-Source leakage current | IGSS | -200 | 200 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=1mA | 2 | |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | -4.6 | mV/℃ | ID=1mA, referenced to 25℃ | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 1.75 | 2.3 | mΩ | VGS=10V, ID=70A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 2.6 | 3.7 | mΩ | VGS=4.5V, ID=35A, pulsed | 2 | |
| Gate resistance | RG | 1 | Ω | 2 | |||
| Forward transfer admittance | /Yfs/ | 27 | S | VDS=5V, ID=35A, pulsed | 2 | ||
| Input capacitance | Ciss | 3540 | pF | VGS=0V, VDS=20V, f=1MHz | 3 | ||
| Output capacitance | Coss | 1620 | pF | VGS=0V, VDS=20V, f=1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 160 | pF | VGS=0V, VDS=20V, f=1MHz | 3 | ||
| Turn-on delay time | td(on) | 22 | ns | VDD≈20V, VGS=10V, ID=35A, RL≈0.57Ω, RG=10Ω | 3 | ||
| Rise time | tr | 21 | ns | VDD≈20V, VGS=10V, ID=35A, RL≈0.57Ω, RG=10Ω | 3 | ||
| Turn-off delay time | td(off) | 90 | ns | VDD≈20V, VGS=10V, ID=35A, RL≈0.57Ω, RG=10Ω | 3 | ||
| Fall time | tf | 62 | ns | VDD≈20V, VGS=10V, ID=35A, RL≈0.57Ω, RG=10Ω | 3 | ||
| Total gate charge | Qg | 56 | nC | VDD≈20V, ID=50A, VGS=10V | 3 | ||
| Total gate charge | Qg | 28 | nC | VDD≈20V, ID=50A, VGS=4.5V | 3 | ||
| Gate-Source charge | Qgs | 8.8 | nC | VDD≈20V, ID=50A | 3 | ||
| Gate-Drain charge | Qgd | 10 | nC | VDD≈20V, ID=50A | 3 | ||
| Body diode continuous forward current | IS | 70 | A | Ta=25℃ | 3 | ||
| Body diode pulse forward current | ISP | 600 | A | Pw≤10μs, duty cycle≤1% | 3 | ||
| Body diode forward voltage | VSD | 1.2 | V | VGS=0V, IS=70A | 3 | ||
| Reverse recovery time | trr | 56 | ns | IS=50A, VGS=0V, di/dt=100A/μs | 3 | ||
| Reverse recovery charge | Qrr | 70 | nC | IS=50A, VGS=0V, di/dt=100A/μs | 3 |
CAD (KiCad official)
- Symbol:
RD3G07BBGTL1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rd3g07bbgtl1-etched.step/rd3g07bbgtl1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rd3g07bbgtl1.step/rd3g07bbgtl1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
d813fbee73667974, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).