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Contents

README

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4485

HL · MOSFETs · SOP-8

4485 from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three parallel source pins (S S S G along the front row of the SOP8 drawing).
2 S passive Source of the P-channel MOSFET, one of three parallel source pins.
3 S passive Source of the P-channel MOSFET, one of three parallel source pins.
4 G input Gate of the P-channel MOSFET, with a gate-source voltage rating of ±20 V.
5 D passive Drain of the P-channel MOSFET, rated -40 V drain-source and -13 A continuous at TC = 25℃, tied to the other drain pins.
6 D passive Drain of the P-channel MOSFET, one of four parallel drain pins.
7 D passive Drain of the P-channel MOSFET, one of four parallel drain pins.
8 D passive Drain of the P-channel MOSFET, one of four parallel drain pins.

Key specifications

Parameter Value
Manufacturer HL
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -40 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID -13 A TC=25℃ 1
Continuous Drain Current ID -8.5 A TC=100℃ 1
Pulsed Drain Current IDM -52 A 1
Single Pulsed Avalanche Energy EAS 80 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-34A 1
Power Dissipation PD 3 W TC=25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance from Junction-to-Ambient RθJA 1.9 ℃/W surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Drain-Source Breakdown Voltage V(BR)DSS -40 V VGS=0V, ID=-250µA 2
Gate-body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-40V, VGS=0V, TJ=25℃ 2
Zero Gate Voltage Drain Current IDSS -100 μA VDS=-40V, VGS=0V, TJ=100℃ 2
Gate-Threshold Voltage VGS(th) -1 -1.5 -2.2 V VDS=VGS, ID=-250µA 2
Drain-Source On-Resistance RDS(on) 14 19 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-Resistance RDS(on) 19.5 25 mΩ VGS=-4.5V, ID=-5A 2
Continuous Source Current IS -13 A TC=25°C 2
Diode Forward Voltage VSD -1.2 V IS=-10A, VGS=0V 2
Forward Transconductance gfs 44 S VDS=-10V, ID=-10A 2
Input Capacitance Ciss 2525 pF VDS=-20V, VGS=0V, f=1MHz 2
Output Capacitance Coss 190 pF VDS=-20V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 172 pF VDS=-20V, VGS=0V, f=1MHz 2
Gate Resistance Rg 10 Ω f=1MHz 2
Total Gate Charge Qg 35 nC VGS=-10V, VDS=-20V, ID=-10A 2
Gate-Source Charge Qgs 5.5 nC VGS=-10V, VDS=-20V, ID=-10A 2
Gate-Drain Charge Qgd 8 nC VGS=-10V, VDS=-20V, ID=-10A 2
Turn-On Delay Time td(on) 14.5 ns VGS=-10V, VDS=-20V, RG=3Ω, ID=-10A 2
Rise Time tr 20.2 ns VGS=-10V, VDS=-20V, RG=3Ω, ID=-10A 2
Turn-Off Delay Time td(off) 32 ns VGS=-10V, VDS=-20V, RG=3Ω, ID=-10A 2
Fall Time tf 10 ns VGS=-10V, VDS=-20V, RG=3Ω, ID=-10A 2

CAD (KiCad official)

  • Symbol: 4485
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: 4485-etched.step / 4485-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4485.step / 4485.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (6 pp, sha256 d0ba8c21fd2488cc, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF