component
NVMFD5853NL-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNVMFD5853NL-HXY
HXY MOSFET · MOSFETs · DFN5X6-8L
NVMFD5853NL-HXY from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; pin 1 is the package orientation marker, and the absolute maximum VGS rating is ±20 V referenced to source. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with the device rated for a drain-source voltage of 40 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with a continuous drain current rating of 40 A at TC=25℃. |
| 4 | G | input | Gate terminal of the N-channel enhancement-mode MOSFET; the part is specified at RDS(ON) < 14mΩ at VGS=10V and is usable with gate voltages as low as 4.5V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for 40 V VDS and a pulsed drain current of 160 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for 40 V VDS and a pulsed drain current of 160 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated for 40 V VDS and a pulsed drain current of 160 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated for 40 V VDS and a pulsed drain current of 160 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 40 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 28 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 50 | mJ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Drain-Source On-Resistance | RDS(ON) | 14 | mΩ | VGS=10V | 1 |
CAD (KiCad official)
- Symbol:
NVMFD5853NL-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
nvmfd5853nl-hxy-etched.step/nvmfd5853nl-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nvmfd5853nl-hxy.step/nvmfd5853nl-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
3a0319807dd08ad8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).