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Contents

README

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IRF3710STR

Minos · MOSFETs · TO-263

IRF3710STR from Minos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V (VGSS), threshold 2.0 to 4.0 V at ID = 250 µA.
2 D passive Drain, the center lead and the metal tab; VDSS 100 V, continuous drain current 70 A at TC = 25 °C.
3 S passive Source; body diode continuous current 70 A and pulsed 230 A flows from source to drain.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (VGS = 0V) VDSS 100 V VGS = 0V 1
Continuous Drain Current ID 70 A 1
Gate-Source Voltage VGSS -20 20 V 1
Single Pulse Avalanche Energy (note2) EAS 1943 mJ 1
Avalanche Current (note1) IAR 32 A 1
Repetitive Avalanche Energy (note1) EAR 36 mJ 1
Power Dissipation PD 200 W TC = 25℃ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RthJC 0.75 ℃/W 2
Thermal Resistance, Junction-to-Ambient RthJA 62 ℃/W 2
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current (TJ = 25℃) IDSS 1 μA VDS = 100V, VGS = 0V, TJ = 25℃ 2
Zero Gate Voltage Drain Current (TJ = 125℃) IDSS 100 μA VDS = 80V, VGS = 0V, TJ = 125℃ 2
Gate-Source Leakage (positive bias) IGSS 100 nA VGS = +20V, VDS = 0V 2
Gate-Source Leakage (negative bias) IGSS -100 nA VGS = -20V, VDS = 0V 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 17 21 mΩ VGS = 10V, ID = 28A 2
Forward Transconductance gfs 85 S VDS = 10V, ID = 28A 2
Input Capacitance Ciss 2700 pF VGS = 0V, VDS = 25V, f = 1.0MHz 2
Output Capacitance Coss 610 pF 2
Reverse Transfer Capacitance Crss 260 pF 2
Total Gate Charge Qg 60 nC VDD = 50V, ID = 28A, VGS = 0 to 10V 2
Gate-Source Charge Qgs 15 nC 2
Gate-Drain Charge Qgd 45 nC 2
Turn-on Delay Time td(on) 20 ns VDD = 50V, ID = 28A, VGS = 10V, RG = 2.5 Ω 2
Turn-on Rise Time tr 28 ns 2
Turn-off Delay Time td(off) 65 ns 2
Turn-off Fall Time tf 15 ns 2
Continuous Body Diode Current IS 70 A TC = 25℃ 2
Pulsed Diode Forward Current ISM 230 A 2
Body Diode Voltage VSD 1.5 V TJ = 25℃, ISD = 28A, VGS = 0V 2
Reverse Recovery Time trr 195 ns VGS = 0V, IS = 28A, diF/dt = 100A/μs 2
Reverse Recovery Charge Qrr 107 μC 2

CAD (KiCad official)

  • Symbol: IRF3710STR
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: irf3710str-etched.step / irf3710str-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf3710str.step / irf3710str.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (9 pp, sha256 9d606fbf1757afbd, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF