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MCP73833-AMI
Public Made by Adomby adom
Microchip Tech Battery Management, DFN-10-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownMCP73833-AMI
Microchip Tech · Battery Management · DFN-10-EP(3x3)
MCP73833-AMI from Microchip Tech, in a DFN-10-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Battery management input supply; a supply of [VREG (typical) + 0.3V] to 6V is recommended, bypassed to VSS with a minimum of 1 µF. |
| 2 | VDD | power_in | Battery management input supply; a supply of [VREG (typical) + 0.3V] to 6V is recommended, bypassed to VSS with a minimum of 1 µF. |
| 3 | STAT1 | output | Open-drain charge status output for driving an LED or interfacing to a host microcontroller through a pull-up resistor. |
| 4 | STAT2 | output | Open-drain charge status output for driving an LED or interfacing to a host microcontroller through a pull-up resistor. |
| 5 | VSS | power_in | Battery management 0V reference, connected to the negative battery terminal and the input supply. |
| 6 | PROG | input | Sets the preconditioning, fast-charge and termination currents through a resistor to VSS; floating this pin disables the charge management controller. |
| 7 | PG | output | Power good output on the MCP73833 (pseudo open-drain, can sink but not source current, to be pulled up only to the input); low when the input is above UVLO and greater than the battery voltage. |
| 8 | THERM | input | Thermistor input with an internal 50 µA bias for 10 kΩ NTC thermistors, compared to factory thresholds of 1.20V and 0.25V (typical). |
| 9 | VBAT | power_out | Battery charge control output connected to the positive battery terminal, drain of the internal P-channel pass transistor; bypass to VSS with a minimum of 1 µF for loop stability when the battery is disconnected. |
| 10 | VBAT | power_out | Battery charge control output connected to the positive battery terminal, drain of the internal P-channel pass transistor; bypass to VSS with a minimum of 1 µF for loop stability when the battery is disconnected. |
| 11 | EP | passive | Exposed thermal pad, internally connected to VSS, and must be connected to the same potential as VSS. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | DFN-10-EP(3x3) |
| Category | Power Management (PMIC) |
| Pins | 11 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage (charging) | VDD | 3.75 | 6 | V | Charging | 3 | |
| Supply Voltage (charge complete, standby) | VDD | 6 | V | Charge Complete, Standby | 3 | ||
| Supply Current (charging) | ISS | 2000 | 3000 | µA | Charging | 3 | |
| Supply Current (charge complete) | ISS | 150 | 300 | µA | Charge Complete | 3 | |
| Supply Current (standby) | ISS | 100 | 300 | µA | Standby (No Battery or PROG Floating) | 3 | |
| Supply Current (shutdown) | ISS | 50 | 100 | µA | Shutdown (VDD < VBAT, or VDD < VSTOP) | 3 | |
| UVLO Start Threshold | VSTART | 3.4 | 3.55 | 3.7 | V | VDD Low-to-High | 3 |
| UVLO Stop Threshold | VSTOP | 3.3 | 3.45 | 3.6 | V | VDD High-to-Low | 3 |
| Line Regulation | /(ΔVBAT/VBAT)/ΔVDD/ | 0.1 | 0.3 | %/V | VDD=[VREG(Typical)+1V] to 6V, IOUT=10 mA | 3 | |
| Load Regulation | /ΔVBAT/VBAT/ | 0.1 | 0.3 | % | IOUT=10 mA to 100 mA, VDD=[VREG(Typical)+1V] | 3 | |
| Fast Charge Current Regulation | IREG | 90 | 100 | 110 | mA | PROG = 10 kΩ | 3 |
| Fast Charge Current Regulation | IREG | 900 | 1000 | 1100 | mA | PROG = 1.0 kΩ | 3 |
| Output Reverse Leakage Current | IDISCHARGE | 0.15 | 2 | µA | PROG Floating | 4 | |
| Output Reverse Leakage Current | IDISCHARGE | 0.25 | 2 | µA | VDD < VBAT | 4 | |
| Output Reverse Leakage Current (charge complete) | IDISCHARGE | -5.5 | -15 | µA | Charge Complete | 4 | |
| Sink Current (status outputs) | ISINK | 15 | 25 | mA | 4 | ||
| Low Output Voltage (status outputs) | VOL | 0.4 | 1 | V | ISINK = 4 mA | 4 | |
| Input Leakage Current (status outputs) | ILK | 0.01 | 1 | µA | High Impedance, 6V on pin | 4 | |
| Charge Impedance Range | RPROG | 1 | 20 | kΩ | 4 | ||
| Standy Impedance | RPROG | 70 | 200 | kΩ | Minimum Impedance for Standby | 4 | |
| Thermistor Current Source | ITHERM | 47 | 50 | 53 | µA | 2 kΩ < RTHERM < 50 kΩ | 4 |
| Upper Trip Threshold | VT1 | 1.2 | 1.23 | 1.26 | V | VTHERM Low-to-High | 4 |
| Lower Trip Threshold | VT2 | 0.235 | 0.25 | 0.265 | V | VTHERM High-to-Low | 4 |
| THERM Input Sink Current | ISINK | 3 | 6 | 20 | µA | Stand-by or system test mode | 4 |
| Bypass Capacitance | CBAT | 1 | µF | IOUT < 250 mA | 4 | ||
| Bypass Capacitance | CBAT | 4.7 | µF | IOUT > 250 mA | 4 | ||
| Regulated Output Voltage tolerance | VREG | -0.75 | 0.75 | % | 14 | ||
| UVLO Start Delay | tSTART | 5 | ms | VDD Low-to-High | 5 | ||
| Transition Time Out of Preconditioning | tDELAY | 1 | ms | VBATVPTH | 5 | ||
| Current Rise Time Out of Preconditioning | tRISE | 1 | ms | IOUT Rising to 90% of IREG | 5 | ||
| Preconditioning Comparator Filter Time | tPRECON | 0.4 | 1.3 | 3.2 | ms | Average VBAT Rise/Fall | 5 |
| Termination Comparator Filter Time | tTERM | 0.4 | 1.3 | 3.2 | ms | Average IOUT Falling | 5 |
| Charge Comparator Filter Time | tCHARGE | 0.4 | 1.3 | 3.2 | ms | Average VBAT Falling | 5 |
| Thermistor Comparator Filter Time | tTHERM | 0.4 | 1.3 | 3.2 | ms | Average THERM Rise/Fall | 5 |
| Status Output turn-off | tOFF | 200 | µs | ISINK = 1 mA to 0 mA | 5 | ||
| Status Output turn-on | tON | 200 | µs | ISINK = 0 mA to 1 mA | 5 | ||
| Specified Temperature Range | TA | -40 | 85 | °C | 5 | ||
| Operating Temperature Range | TA | -40 | 125 | °C | 5 | ||
| Storage Temperature Range | TA | -65 | 150 | °C | 5 | ||
| Supply Voltage (absolute maximum) | VDD | 7 | V | 3 | |||
| ESD Human Body Model | 4 | kV | HBM (1.5 kΩ in Series with 100 pF) | 3 | |||
| Thermal Resistance, DFN-10 3 mm x 3 mm | θJA | 41 | °C/W | 4-Layer JC51-7 Standard Board, Natural Convection | 5 |
CAD (KiCad official)
- Symbol:
MCP73833-AMI - Footprint:
Package_DFN_QFN:DFN-10-1EP_3x3mm_P0.5mm_EP1.55x2.48mm - 3D model: DFN-10-EP(3x3) (KiCad packages3D, STEP)
- 3D model files:
mcp73833-ami-etched.step/mcp73833-ami-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mcp73833-ami.step/mcp73833-ami.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Microchip Tech datasheet (32 pp, sha256
70b297a13b77cebf, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).