component
SP20N09T1
Public Made by Adomby adom
Siliup MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSP20N09T1
Siliup · MOSFETs · SOT-23-3L
SP20N09T1 from Siliup, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, threshold 0.5 to 1.5 V at ID=250µA, gate leakage max ±100 nA. |
| 2 | S | passive | Source; connects to the body diode anode, continuous drain current 7 A and pulsed 28 A. |
| 3 | D | passive | Drain; drain-source voltage rated 20 V, RDS(on) 10 mΩ typ at VGS=4.5V and 13 mΩ typ at VGS=2.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=16V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.5 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance (VGS=4.5V) | RDS(ON) | 10 | 13 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Static Drain-Source On-Resistance (VGS=2.5V) | RDS(ON) | 13 | 18 | mΩ | VGS=2.5V, ID=5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDSS | 20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID | 7 | A | 2 | |||
| Pulse Drain Current Tested | IDM | 28 | A | 2 | |||
| Power Dissipation | PD | 1.25 | W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 100 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
SP20N09T1 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
sp20n09t1-etched.step/sp20n09t1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp20n09t1.step/sp20n09t1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
cdaaf6604d455c20, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).