component
US1G_R1_00001
Public Made by Adomby adom
PANJIT International Diodes - Fast Recovery Rectifiers, SMA(DO-214AC). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUS1G_R1_00001
PANJIT International · Diodes - Fast Recovery Rectifiers · SMA(DO-214AC)
US1G_R1_00001 from PANJIT International, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal, marked by the color band on the package; the US1G blocks up to 400 V (VRRM) and conducts up to 1 A average forward current. |
| 2 | Anode | passive | Anode terminal; the US1G has a maximum forward voltage of 1.3 V at 1 A and a peak forward surge current of 30 A (8.3 ms half sine-wave). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SMA(DO-214AC) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Recurrent Peak Reverse Voltage | VRRM | 400 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 280 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 400 | V | 1 | |||
| Maximum Average Forward Current | IF(AV) | 1 | A | 1 | |||
| Peak Forward Surge Current | IFSM | 30 | A | 8.3ms single half sine-wave superimposed on rated load | 1 | ||
| Maximum DC Reverse Current | IR | 1 | μA | at Rated DC Blocking Voltage, TJ = 25 °C | 1 | ||
| Maximum DC Reverse Current | IR | 100 | μA | at Rated DC Blocking Voltage, TJ = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Typical Junction Capacitance | CJ | 17 | pF | Note 2: 1 MHz, applied Vr = 4 V | 1 | ||
| Typical Thermal Resistance | RθJL | 30 | °C/W | Note 3: 8mm2 (0.013mm thick) land areas | 1 | ||
| Typical Thermal Resistance | RθJC | 28 | °C/W | Note 4: mounted on 100cm2 FR4 PCB | 1 |
CAD (KiCad official)
- Symbol:
US1G_R1_00001 - Footprint:
Diode_SMD:D_SMA - 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files:
us1g-r1-00001-etched.step/us1g-r1-00001-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);us1g-r1-00001.step/us1g-r1-00001.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (5 pp, sha256
de0706af8e371a4b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).