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Contents

README

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ZXMN2B14FHTA

Diodes Incorporated · MOSFETs · SOT-23

ZXMN2B14FHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; absolute maximum gate-source voltage is ±8 V and gate-source threshold voltage is 0.4 V min to 1.0 V max.
2 S passive Source of the N-channel MOSFET; continuous source current (body diode) is rated 2.4 A and pulsed source current 21 A.
3 D passive Drain of the N-channel MOSFET; drain-source voltage is rated 20 V (VDSS) with continuous drain current of 4.3 A at Tamb=25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 20 V 2
Gate-source voltage VGS -8 8 V 2
Continuous drain current ID 4.3 A VGS= 4.5V; Tamb=25°C (b) 2
Continuous drain current ID 3.5 A VGS= 4.5V; Tamb=70°C (b) 2
Pulsed drain current IDM 21 A (c) 2
Continuous source current (body diode) IS 2.4 A (b) 2
Pulsed source current (body diode) ISM 21 A (c) 2
Power dissipation at Tamb=25°C PD 1 W (a) 2
Linear derating factor 8 mW/°C (a) 2
Power dissipation at Tamb=25°C PD 1.5 W (b) 2
Linear derating factor 12 mW/°C (b) 2
Operating and storage temperature range Tj, Tstg -55 150 °C 2
Junction to ambient RJA 125 °C/W (a) 2
Junction to ambient RJA 82 °C/W (b) 2
Drain-source breakdown voltage V(BR)DSS 20 V ID= 250A, VGS=0V 4
Zero gate voltage drain current IDSS 1 A VDS= 20V, VGS=0V 4
Gate-body leakage IGSS 100 nA VGS=±8V, VDS=0V 4
Gate-source threshold voltage VGS(th) 0.4 1 V ID= 250A, VDS=VGS 4
Static drain-source on-state resistance RDS(on) 0.055 Ω VGS= 4.5V, ID= 3.5A 4
Static drain-source on-state resistance RDS(on) 0.075 Ω VGS= 2.5V, ID= 3A 4
Static drain-source on-state resistance RDS(on) 0.1 Ω VGS= 1.8V, ID= 2.6A 4
Diode forward voltage VSD 0.69 0.95 V Tj=25°C, IS= 1.45A, VGS=0V 4

CAD (KiCad official)

  • Symbol: ZXMN2B14FHTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxmn2b14fhta-etched.step / zxmn2b14fhta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn2b14fhta.step / zxmn2b14fhta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 ed38b0413b0b156d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF