component
IRFU9220PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-251-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFU9220PBF
Vishay Intertech · MOSFETs · TO-251-3
IRFU9220PBF from Vishay Intertech, in a TO-251-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a maximum gate-source voltage of ±20 V with a threshold of -2.0 to -4.0 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -200 V and continuous ID of -3.6 A at TC = 25 °C, and connected to the mounting tab. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous body-diode current IS of -3.6 A and pulsed ISM of -14 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-251-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -200 | V | TC = 25 °C | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous drain current | ID | -3.6 | A | VGS at -10 V, TC = 25 °C | 1 | ||
| Continuous drain current | ID | -2.3 | A | VGS at -10 V, TC = 100 °C | 1 | ||
| Pulsed drain current | IDM | -14 | A | Repetitive rating; pulse width limited by max junction temperature | 1 | ||
| Single pulse avalanche energy | EAS | 310 | mJ | VDD = -50 V, starting TJ = 25 °C, L = 35 mH, Rg = 25 Ω, IAS = -3.6 A | 1 | ||
| Repetitive avalanche current | IAR | -3.6 | A | 1 | |||
| Repetitive avalanche energy | EAR | 4.2 | mJ | 1 | |||
| Maximum power dissipation | PD | 42 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation (PCB mount) | PD | 2.5 | W | TA = 25 °C | 1 | ||
| Linear derating factor | 0.33 | W/°C | 1 | ||||
| Linear derating factor (PCB mount) | 0.02 | W/°C | 1 | ||||
| Peak diode recovery dV/dt | dV/dt | -5 | V/ns | ISD ≤ -3.9 A, dI/dt ≤ 95 A/μs, VDD ≤ VDS, TJ ≤ 150 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 260 | °C | For 10 s, 1.6 mm from case | 1 | |||
| Maximum junction-to-ambient | RthJA | 110 | °C/W | 2 | |||
| Maximum junction-to-ambient (PCB mount) | RthJA | 50 | °C/W | When mounted on 1" square PCB | 2 | ||
| Maximum junction-to-case (drain) | RthJC | 3 | °C/W | 2 | |||
| Drain-source breakdown voltage | VDS | -200 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -2 | -4 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | -100 | μA | VDS = -200 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | -500 | μA | VDS = -160 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 1.5 | Ω | VGS = -10 V, ID = -2.2 A | 2 | ||
| Forward transconductance | gfs | 1.1 | S | VDS = -50 V, ID = -2.2 A | 2 | ||
| Total gate charge | Qg | 20 | nC | VGS = -10 V, ID = -3.9 A, VDS = -160 V | 2 | ||
| Gate-source charge | Qgs | 3.3 | nC | VGS = -10 V, ID = -3.9 A, VDS = -160 V | 2 | ||
| Gate-drain charge | Qgd | 11 | nC | VGS = -10 V, ID = -3.9 A, VDS = -160 V | 2 | ||
| Continuous source-drain diode current | IS | 3.6 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 | ||
| Pulsed diode forward current | ISM | 14 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 | ||
| Body diode voltage | VSD | 6.3 | V | TJ = 25 °C, IS = -3.6 A, VGS = 0 V | 2 | ||
| Body diode reverse recovery time | trr | 150 | 300 | ns | TJ = 25 °C, IF = -3.9 A, dI/dt = 100 A/μs | 2 | |
| Body diode reverse recovery charge | Qrr | 0.97 | 2 | μC | TJ = 25 °C, IF = -3.9 A, dI/dt = 100 A/μs | 2 | |
| VDS temperature coefficient | ΔVDS/TJ | -0.22 | V/°C | Reference to 25 °C, ID = -1 mA | 2 | ||
| Input capacitance | Ciss | 340 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Output capacitance | Coss | 110 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Reverse transfer capacitance | Crss | 33 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Turn-on delay time | td(on) | 8.8 | ns | VDD = -100 V, ID = -3.9 A, Rg = 18 Ω, RD = 24 Ω | 2 | ||
| Rise time | tr | 27 | ns | VDD = -100 V, ID = -3.9 A, Rg = 18 Ω, RD = 24 Ω | 2 | ||
| Turn-off delay time | td(off) | 7.3 | ns | VDD = -100 V, ID = -3.9 A, Rg = 18 Ω, RD = 24 Ω | 2 | ||
| Fall time | tf | 19 | ns | VDD = -100 V, ID = -3.9 A, Rg = 18 Ω, RD = 24 Ω | 2 |
CAD (KiCad official)
- Symbol:
IRFU9220PBF - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251-3 (KiCad packages3D, STEP)
- 3D model files:
irfu9220pbf-etched.step/irfu9220pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfu9220pbf.step/irfu9220pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (13 pp, sha256
150e3ee05748cf03, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).