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Contents

README

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RJK005N03T146

ROHM Semicon · MOSFETs · TO-236-3(SOT-23-3)

RJK005N03T146 from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel MOSFET, rated for a body-diode source current IS of 200 mA continuous and ISP of 800 mA pulsed, with VDSS of 30 V.
2 Gate input Gate terminal, rated for VGSS of ±12 V with a gate threshold VGS(th) of 0.8 V to 1.5 V, and includes an ESD protection diode.
3 Drain passive Drain terminal, rated for VDSS of 30 V and continuous drain current ID of ±500 mA (pulsed IDP ±2.0 A, pulse width ≤10 µs, duty cycle ≤1%).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-236-3(SOT-23-3)
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 30 V 1
Gate-source voltage VGSS -12 12 V 1
Drain current, continuous ID -500 500 mA Continuous 1
Drain current, pulsed IDP -2 2 A Pulsed, Pw≤10µs, Duty cycle≤1% 1
Source current (body diode), continuous IS 200 mA Continuous 1
Source current (body diode), pulsed ISP 800 mA Pulsed, Pw≤10µs, Duty cycle≤1% 1
Total power dissipation PD 200 mW Each terminal mounted on a recommended land 1
Channel temperature Tch 150 °C 1
Range of storage temperature Tstg -55 150 °C 1
Channel to ambient thermal resistance Rth(ch-a) 625 °C/W Each terminal mounted on a recommended land 1
Gate-source leakage IGSS -10 10 µA VGS=±12V, VDS=0V 2
Drain-source breakdown voltage V(BR)DSS 30 V ID= 1mA, VGS=0V 2
Zero gate voltage drain current IDSS 1 µA VDS= 30V, VGS=0V 2
Gate threshold voltage VGS(th) 0.8 1.5 V VDS= 10V, ID= 1mA 2
Static drain-source on-state resistance RDS(on) 400 580 mΩ ID= 500mA, VGS= 4.5V 2
Static drain-source on-state resistance RDS(on) 420 600 mΩ ID= 500mA, VGS= 4V 2
Static drain-source on-state resistance RDS(on) 650 940 mΩ ID= 500mA, VGS= 2.5V 2
Forward transfer admittance Yfs 0.5 S VDS= 10V, ID= 500mA 2
Forward voltage (body diode) VSD 1.2 V IS= 500mA, VGS=0V 2
Input capacitance Ciss 60 pF VDS= 10V 2
Output capacitance Coss 24 pF VGS=0V 2
Reverse transfer capacitance Crss 9 pF f=1MHz 2
Turn-on delay time td (on) 11 ns VDD 15V, ID= 250mA, VGS= 4V, RL=60Ω, RG=10Ω 2
Rise time tr 16 ns VDD 15V, ID= 250mA, VGS= 4V, RL=60Ω, RG=10Ω 2
Turn-off delay time td (off) 31 ns VDD 15V, ID= 250mA, VGS= 4V, RL=60Ω, RG=10Ω 2
Fall time tf 2 ns VDD 15V, ID= 250mA, VGS= 4V, RL=60Ω, RG=10Ω 2
Total gate charge Qg 4 nC VDD 15V, ID= 500mA, VGS= 4V 2
Gate-source charge Qgs 0.6 nC VGS= 4V, ID= 500mA 2
Gate-drain charge Qgd 0.7 nC ID= 500mA 2

CAD (KiCad official)

  • Symbol: RJK005N03T146
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: rjk005n03t146-etched.step / rjk005n03t146-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rjk005n03t146.step / rjk005n03t146.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (3 pp, sha256 393de5d818a2eb87, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF