component
IRFR1018ETRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFR1018ETRPBF
Infineon Technologies · MOSFETs · TO-252
IRFR1018ETRPBF from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±20 V maximum, with a threshold of 2.0 V to 4.0 V at ID = 100 μA. |
| 2 | D | passive | Drain; drain-to-source breakdown is 60 V minimum, with continuous current of 79 A (silicon limited) and 56 A (wire bond/package limited) at TC = 25°C. |
| 3 | S | passive | Source; the body diode carries a continuous source current of up to 79 A and a pulsed source current of up to 315 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 7.1 | 8.4 | mΩ | VGS = 10V, ID = 47A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 100μA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | μA | VDS = 48V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 110 | S | VDS = 50V, ID = 47A | 2 | ||
| Total Gate Charge | Qg | 46 | 69 | nC | ID = 47A | 2 | |
| Continuous Source Current (Body Diode) | IS | 79 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed Source Current (Body Diode) | ISM | 315 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 47A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 26 | 39 | ns | TJ = 25°C, VR = 51V, IF = 47A, di/dt = 100A/μs | 2 | |
| Reverse Recovery Time | trr | 31 | 47 | ns | TJ = 125°C, VR = 51V, IF = 47A, di/dt = 100A/μs | 2 | |
| Reverse Recovery Charge | Qrr | 24 | 36 | nC | TJ = 25°C | 2 | |
| Reverse Recovery Charge | Qrr | 35 | 53 | nC | TJ = 125°C | 2 | |
| Continuous Drain Current (Silicon Limited) | ID | 79 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 56 | A | TC = 100°C, VGS @ 10V | 1 | ||
| Continuous Drain Current (Wire Bond Limited) | ID | 56 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 315 | A | 1 | |||
| Maximum Power Dissipation | PD | 88 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 0.76 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery | dv/dt | 11 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Single Pulse Avalanche Energy | EAS | 110 | mJ | Thermally limited | 1 | ||
| Avalanche Current | IAR | 47 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 21 | mJ | 1 | |||
| Junction-to-Case | RθJC | 1.32 | °C/W | 1 | |||
| Junction-to-Ambient (PCB Mount) | RθJA | 50 | °C/W | 1 | |||
| Junction-to-Ambient | RθJA | 110 | °C/W | 1 | |||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.073 | V/°C | Reference to 25°C, ID = 5mA | 2 | ||
| Internal Gate Resistance | RG(int) | 0.73 | Ω | 2 | |||
| Input Capacitance | Ciss | 2290 | pF | VGS = 0V, VDS = 50V, ƒ = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 270 | pF | VGS = 0V, VDS = 50V, ƒ = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 130 | pF | VGS = 0V, VDS = 50V, ƒ = 1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
IRFR1018ETRPBF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr1018etrpbf-etched.step/irfr1018etrpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr1018etrpbf.step/irfr1018etrpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
eed3349db02a7933, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).