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SIR432DP-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSIR432DP-T1-GE3-VB
VBsemi Elec · MOSFETs · DFN5x6-8
SIR432DP-T1-GE3-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1 marked with a dot on the top view). |
| 2 | S | passive | Source terminal of the N-channel MOSFET. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
| 4 | G | input | Gate terminal; gate-source voltage limited to ±20 V. |
| 5 | D | passive | Drain terminal; drain-source voltage rated 100 V. |
| 6 | D | passive | Drain terminal; drain-source voltage rated 100 V. |
| 7 | D | passive | Drain terminal; drain-source voltage rated 100 V. |
| 8 | D | passive | Drain terminal; drain-source voltage rated 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 100 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 30 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous drain current | ID | 19 | A | TC = 70 °C (TJ = 150 °C) | 1 | ||
| Continuous drain current | ID | 10 | A | TA = 25 °C, notes b, c | 1 | ||
| Continuous drain current | ID | 8.5 | A | TA = 70 °C, notes b, c | 1 | ||
| Pulsed drain current | IDM | 75 | A | t = 100 μs | 1 | ||
| Continuous source-drain diode current | IS | 56 | A | TC = 25 °C | 1 | ||
| Continuous source-drain diode current | IS | 4.5 | A | TA = 25 °C, notes b, c | 1 | ||
| Single pulse avalanche current | IAS | 20 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 20 | mJ | 1 | |||
| Maximum power dissipation | PD | 60 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 40 | W | TC = 70 °C | 1 | ||
| Maximum power dissipation | PD | 5 | W | TA = 25 °C, notes b, c | 1 | ||
| Maximum power dissipation | PD | 3.2 | W | TA = 70 °C, notes b, c | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 260 | °C | note c | 1 | |||
| Maximum junction-to-ambient | RthJA | 20 | 25 | °C/W | t ≤ 10 s, note b | 1 | |
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250 μA | 2 | |
| On-state drain current | ID(on) | 40 | A | VDS 10 V, VGS = 10 V | 2 | ||
| Gate-source leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 15 | μA | VDS = 100 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| Gate resistance | Rg | 0.2 | 0.76 | 1.4 | f = 1 MHz | 2 | |
| Turn-on delay time | td(on) | 24 | ns | VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 | 2 | ||
| Rise time | tr | 5 | 10 | ns | VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 | 2 | |
| Turn-off delay time | td(off) | 19 | 38 | ns | VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 | 2 | |
| Fall time | tf | 5 | 10 | ns | VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 | 2 | |
| Turn-on delay time | td(on) | 30 | ns | VDD = 50 V, RL = 5, ID 10 A, VGEN = 7.5 V, Rg = 1 | 2 | ||
| Rise time | tr | 6 | 12 | ns | VDD = 50 V, RL = 5, ID 10 A, VGEN = 7.5 V, Rg = 1 | 2 | |
| Continuous source-drain diode current | IS | 56.8 | A | TC = 25 °C | 2 | ||
| Pulse diode forward current | ISM | 80 | A | 2 | |||
| Body diode voltage | VSD | 0.78 | 1.1 | V | IS = 5 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 86 | ns | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | ||
| Body diode reverse recovery charge | Qrr | 72 | 144 | nC | 2 |
CAD (KiCad official)
- Symbol:
SIR432DP-T1-GE3-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
sir432dp-t1-ge3-vb-etched.step/sir432dp-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sir432dp-t1-ge3-vb.step/sir432dp-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
b95f11d800a947f4, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).