component
HSS1N20
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSS1N20
HUASHUO · MOSFETs · SOT-23L
HSS1N20 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGS of ±30 V and threshold VGS(th) of 1.0 V min to 2.5 V max at 250 uA. |
| 2 | S | passive | Source; the current return terminal of the N-channel MOSFET, with continuous drain current of 1 A at TA=25 °C. |
| 3 | D | passive | Drain; rated for a maximum drain-source voltage of 200 V, 1 A continuous and 6 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 1 | A | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 0.8 | A | TA=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 6 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 0.71 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 1.65 | 1.9 | Ω | VGS=10V, ID=1A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.85 | 2.2 | Ω | VGS=4.5V, ID=0.8A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=200V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=200V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 1 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSS1N20 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files:
hss1n20-etched.step/hss1n20-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss1n20.step/hss1n20.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
1f318002f64149c0, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).