component
7N65KL-TN3-R
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown7N65KL-TN3-R
UTC(Unisonic Tech) · MOSFETs · TO-252
7N65KL-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; control input with VGS(TH) of 2.0 to 4.0 V (VDS = VGS, ID = 250μA) and maximum VGSS of ±30 V. |
| 2 | D | passive | Drain; rated for VDSS of 650 V and continuous drain current ID of 7 A (TC = 25°C). |
| 3 | S | passive | Source; main current return terminal of the N-channel MOSFET, with RDS(ON) below 1.6 Ω at VGS = 10 V, ID = 3.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | TC = 25°C | 3 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC = 25°C | 3 | |
| Avalanche Current | IAR | 7 | A | Repetitive rating: pulse width limited by TJ | 3 | ||
| Continuous Drain Current | ID | 7 | A | TC = 25°C | 3 | ||
| Pulsed Drain Current | IDM | 24 | A | Repetitive rating: pulse width limited by TJ | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 350 | mJ | L = 14.28mH, IAS = 7A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | ns | ISD ≤ 7A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C | 3 | ||
| Power Dissipation (TO-251/TO-252) | PD | 55 | W | TC = 25°C, TO-251/TO-252 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction to Ambient Thermal Resistance (TO-251/TO-252) | θJA | 110 | °C/W | TO-251/TO-252 | 3 | ||
| Junction to Case Thermal Resistance (TO-251/TO-252) | θJC | 2.27 | °C/W | TO-251/TO-252 | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0V, ID = 250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 650V, VGS = 0V | 4 | ||
| Gate-Source Leakage Current, Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 4 | ||
| Gate-Source Leakage Current, Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.6 | Ω | VGS = 10V, ID = 3.5A | 4 | ||
| Input Capacitance | CISS | 875 | 1000 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 4 | |
| Output Capacitance | COSS | 88 | 120 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 8 | 25 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 4 | |
| Turn-On Delay Time | tD(ON) | 50 | 60 | ns | VDD=30V, ID =0.5A, RG =25Ω | 4 | |
| Turn-On Rise Time | tR | 65 | 80 | ns | VDD=30V, ID =0.5A, RG =25Ω | 4 | |
| Turn-Off Delay Time | tD(OFF) | 110 | 130 | ns | VDD=30V, ID =0.5A, RG =25Ω | 4 | |
| Turn-Off Fall Time | tF | 55 | 70 | ns | VDD=30V, ID =0.5A, RG =25Ω | 4 | |
| Total Gate Charge | QG | 22.5 | 40 | nC | VDS=50V, ID=1.3A, VGS=10V | 4 | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 7 A | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 7 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 28 | A | 4 | |||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.53 | V/°C | ID=250μA, Referenced to 25°C | 4 | ||
| Gate-Source Charge | QGS | 7.5 | nC | VDS=50V, ID=1.3A, VGS=10V | 4 | ||
| Gate-Drain Charge | QGD | 5 | nC | VDS=50V, ID=1.3A, VGS=10V | 4 | ||
| Body Diode Reverse Recovery Time | trr | 320 | ns | IS=7A, di/dt=100A/μs | 4 | ||
| Body Diode Reverse Recovery Charge | QRR | 2.4 | nC | IS=7A, di/dt=100A/μs | 4 |
CAD (KiCad official)
- Symbol:
7N65KL-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
7n65kl-tn3-r-etched.step/7n65kl-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);7n65kl-tn3-r.step/7n65kl-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (7 pp, sha256
1adfcc6e66a6e780, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).