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BLM04N06-B

Public Made by Adom

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BL(Shanghai Belling) MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

BLM04N06-B

BL(Shanghai Belling) · MOSFETs · TO-263

BLM04N06-B from BL(Shanghai Belling), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V with threshold VGS(th) of 2 V min to 4 V max at ID=250μA.
2 D passive Drain (also the exposed tab); VDS is 60 V max, continuous ID is 150 A and pulsed IDM is 600 A.
3 S passive Source; RDS(ON) is below 4.2 mΩ at VGS=10V, and the body diode forward voltage is 1.2 V max at IS=150A.

Key specifications

Parameter Value
Manufacturer BL(Shanghai Belling)
Package TO-263
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 3.5 4.2 mΩ VGS=10V, ID=50A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=150A 2
Drain-Source Voltage VDS 60 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID 150 A TA=25℃ 1
Drain Current-Pulsed IDM 600 A TA=25℃ 1
Maximum Power Dissipation PD 210 W Tc=25℃ 1
Single pulse avalanche energy EAS 1000 mJ Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 0.7 ℃/W 1
Forward Transconductance gFS 180 S VDS=50V,ID=75A 2
Input Capacitance Clss 8200 pF VDS=25V,VGS=0V,f=1.0MHz 2
Output Capacitance Coss 760 pF VDS=25V,VGS=0V,f=1.0MHz 2
Reverse Transfer Capacitance Crss 680 pF VDS=25V,VGS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 27 nS VDD=30V, ID=40A, VGS=10V,RGEN=3Ω 2
Turn-on Rise Time tr 25 nS VDD=30V, ID=40A, VGS=10V,RGEN=3Ω 2
Turn-Off Delay Time td(off) 90 nS VDD=30V, ID=40A, VGS=10V,RGEN=3Ω 2
Turn-Off Fall Time tf 40 nS VDD=30V, ID=40A, VGS=10V,RGEN=3Ω 2
Total Gate Charge Qg 186 nC VDS=60V,ID=40A VGS=10V 2
Gate-Source Charge Qgs 46 nC VDS=60V,ID=40A VGS=10V 2
Gate-Drain Charge Qgd 70 nC VDS=60V,ID=40A VGS=10V 2

CAD (KiCad official)

  • Symbol: BLM04N06-B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: blm04n06-b-etched.step / blm04n06-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); blm04n06-b.step / blm04n06-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BL(Shanghai Belling) datasheet (8 pp, sha256 c6088c8e846dd0f4, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF