component
FQT7N10LTF-ES
Public Made by Adomby adom
ElecSuper MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFQT7N10LTF-ES
ElecSuper · MOSFETs · SOT-223
FQT7N10LTF-ES from ElecSuper, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the gate-source voltage VGS is limited to ±20 V per the absolute maximum ratings. |
| 2 | Drain | passive | MOSFET drain terminal; the drain-source voltage BVDSS is rated at 100 V and the continuous drain current ID is 4 A at TA=25°C. |
| 3 | Source | passive | MOSFET source terminal; the body diode forward voltage VSD is 1.5 V typical at IS=4 A with VGS=0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 4 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | 2.3 | A | TA=100°C | 2 | ||
| Maximum Power Dissipation | PD | 3.1 | W | 2 | |||
| Pulsed Drain Current | IDM | 16 | A | 2 | |||
| Avalanche Current, Single Pulsed | IAS | 9 | A | Note a: Tj=25℃,VDD=100V,VG=10V,L=0.3mH,Rg=25Ω | 2 | ||
| Avalanche Energy, Single Pulsed | EAS | 12 | mJ | Note a: Tj=25℃,VDD=100V,VG=10V,L=0.3mH,Rg=25Ω | 2 | ||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (Single Operation) | RθJA | 40 | °C/W | Single Operation | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=100V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 120 | 150 | mΩ | VGS=10V, ID=4A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 130 | 180 | mΩ | VGS=4.5V, ID=3A | 3 | |
| Input Capacitance | CISS | 650 | pF | VGS=0V, f=1MHz, VDS=25V | 3 | ||
| Output Capacitance | COSS | 30 | pF | VGS=0V, f=1MHz, VDS=25V | 3 | ||
| Reverse Transfer Capacitance | CRSS | 25 | pF | VGS=0V, f=1MHz, VDS=25V | 3 | ||
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=4A | 3 |
CAD (KiCad official)
- Symbol:
FQT7N10LTF-ES - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
fqt7n10ltf-es-etched.step/fqt7n10ltf-es-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqt7n10ltf-es.step/fqt7n10ltf-es.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (8 pp, sha256
fd9edee737b42ce7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).