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Contents

README

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CJ502K

Changjing · MOSFETs · SOT-23

CJ502K from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V, and a protection diode is built in between gate and source.
2 SOURCE passive Source terminal, the reference for VGS (±20 V); the source-drain diode is rated at -0.18 A continuous and -0.7 A pulsed.
3 DRAIN passive Drain terminal; drain-source voltage is rated at -50 V, with continuous drain current of -0.18 A and pulsed drain current of -0.7 A (tp < 10 µs).

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -50 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (note 1) ID -0.18 A Note 1: FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 1
Pulsed Drain Current IDM -0.7 A tp <10 μs 1
Power Dissipation (note 2) 350 mW Note 2: FR4 PCB, single-sided copper, tin-plated and standard footprint 1
Power Dissipation (note 1) PD 420 mW Note 1: FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 1
Thermal Resistance from Junction to Ambient (note 2) 357 ℃/W Note 2: FR4 PCB, single-sided copper, tin-plated and standard footprint 1
Thermal Resistance from Junction to Ambient (note 1) RθJA 298 ℃/W Note 1: FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Maximum Lead Temperature for Soldering Purposes TL 260 ℃ Duration for 5 seconds 1
Drain-source breakdown voltage V(BR)DSS -50 V VGS = 0V, ID =-250µA 2
Zero gate voltage drain current IDSS -15 µA VDS =-50V, VGS = 0V 2
Zero gate voltage drain current IDSS -0.1 µA VDS =-25V, VGS = 0V 2
Gate-body leakage current IGSS -10 10 µA VGS =±20V, VDS = 0V 2
Gate threshold voltage (note 1) VGS(th) -2 -0.9 V VDS =VGS, ID =-250µA 2
Drain-source on-resistance (note 1) RDS(on) 10 Ω VGS =-5V, ID =-0.1A 2
Drain-source on-resistance (note 1) RDS(on) 8 Ω VGS =-10V, ID =-0.1A 2
Forward transconductance (note 1) gFS 50 mS VDS=-25V; ID=-100mA 2
Continuous current IS -0.18 A 2
Pulsed current ISM -0.7 A 2
Diode forward voltage (note 1) VDS -2.2 V IS=-0.13A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: CJ502K
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: cj502k-etched.step / cj502k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cj502k.step / cj502k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 156800c7c6699f0b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF