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SQ1563AEH-T1_GE3

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Vishay Intertech MOSFETs, SOT-363-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SQ1563AEH-T1_GE3

Vishay Intertech · MOSFETs · SOT-363-6

SQ1563AEH-T1_GE3 from Vishay Intertech, in a SOT-363-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1), rated 20 V VDS and 0.85 A continuous drain current.
2 G1 input Gate of the N-channel MOSFET (Q1), with gate-source voltage limited to ±8 V.
3 D2 passive Drain of the P-channel MOSFET (Q2), rated -20 V VDS and -0.85 A continuous drain current.
4 S2 passive Source of the P-channel MOSFET (Q2), rated -20 V VDS and -0.85 A continuous source current.
5 G2 input Gate of the P-channel MOSFET (Q2), with gate-source voltage limited to ±8 V.
6 D1 passive Drain of the N-channel MOSFET (Q1), rated 20 V VDS and 0.85 A continuous drain current.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-363-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage N-Ch VDS 20 V TC = 25 °C 1
Drain-source voltage P-Ch VDS -20 V TC = 25 °C 1
Gate-source voltage VGS -8 8 V TC = 25 °C 1
Continuous drain current N-Ch ID 0.85 A TC = 25 °C 1
Continuous drain current P-Ch ID -0.85 A TC = 25 °C 1
Continuous drain current P-Ch ID -0.79 A TC = 125 °C 1
Continuous source current N-Ch IS 0.85 A diode conduction 1
Continuous source current P-Ch IS -0.85 A diode conduction 1
Pulsed drain current N-Ch IDM 3.3 A Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % 1
Pulsed drain current P-Ch IDM -3.3 A Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % 1
Single pulse avalanche current N-Ch IAS 3.5 A L = 0.1 mH 1
Single pulse avalanche current P-Ch IAS -1.4 A L = 0.1 mH 1
Single pulse avalanche energy N-Ch EAS 0.6 mJ L = 0.1 mH 1
Single pulse avalanche energy P-Ch EAS 0.1 mJ L = 0.1 mH 1
Maximum power dissipation PD 1.5 W TC = 25 °C 1
Maximum power dissipation PD 0.5 W TC = 125 °C 1
Operating junction and storage temperature range TJ, Tstg -55 175 °C 1
Junction-to-ambient thermal resistance RthJA 220 °C/W PCB mount, 1" square PCB (FR4) 1
Junction-to-foot (drain) thermal resistance RthJF 100 °C/W 1
Drain-source breakdown voltage N-Ch VDS 20 V VGS = 0 V, ID = 250 μA 2
Drain-source breakdown voltage P-Ch VDS -20 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage N-Ch VGS(th) 0.45 0.6 1.5 V VDS = VGS, ID = 250 μA 2
Gate-source threshold voltage P-Ch VGS(th) -0.45 -0.6 -1.5 V VDS = VGS, ID = -250 μA 2
Gate-source leakage N-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Gate-source leakage P-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero gate voltage drain current N-Ch IDSS 1 μA VGS = 0 V, VDS = 20 V 2
Zero gate voltage drain current P-Ch IDSS -1 μA VGS = 0 V, VDS = -20 V 2
Zero gate voltage drain current N-Ch IDSS 50 μA VGS = 0 V, VDS = 20 V, TJ = 125 °C 2
Zero gate voltage drain current P-Ch IDSS -50 μA VGS = 0 V, VDS = -20 V, TJ = 125 °C 2
Zero gate voltage drain current N-Ch IDSS 150 μA VGS = 0 V, VDS = 20 V, TJ = 175 °C 2
Zero gate voltage drain current P-Ch IDSS -150 μA VGS = 0 V, VDS = -20 V, TJ = 175 °C 2
On-state drain current N-Ch ID(on) 2 A VGS = 4.5 V, VDS ≥ 5 V 2
On-state drain current P-Ch ID(on) -2 A VGS = -4.5 V, VDS ≤ -5 V 2
Drain-source on-state resistance N-Ch RDS(on) 0.15 0.28 Ω VGS = 4.5 V, ID = 0.85 A 2
Drain-source on-state resistance P-Ch RDS(on) 0.5 0.575 Ω VGS = -4.5 V, ID = -0.80 A 2
Drain-source on-state resistance N-Ch RDS(on) 0.18 0.36 Ω VGS = 2.5 V, ID = 0.85 A 2
Drain-source on-state resistance P-Ch RDS(on) 1.05 1.3 Ω VGS = -2.5 V, ID = -0.60 A 2
Drain-source on-state resistance N-Ch RDS(on) 0.21 0.45 Ω VGS = 1.8 V, ID = 0.85 A 2
Drain-source on-state resistance P-Ch RDS(on) 1.2 1.5 Ω VGS = -1.8 V, ID = -0.20 A 2
Input capacitance N-Ch Ciss 67 89 pF VGS = 0 V, VDS = 10 V, f = 1 MHz 2
Input capacitance P-Ch Ciss 63 84 pF VGS = 0 V, VDS = -10 V, f = 1 MHz 2
Output capacitance N-Ch Coss 22 29 pF VGS = 0 V, VDS = 10 V, f = 1 MHz 2
Output capacitance P-Ch Coss 26 34 pF VGS = 0 V, VDS = -10 V, f = 1 MHz 2
Reverse transfer capacitance N-Ch Crss 10 13 pF VGS = 0 V, VDS = 10 V, f = 1 MHz 2
Reverse transfer capacitance P-Ch Crss 10 13 pF VGS = 0 V, VDS = -10 V, f = 1 MHz 2
Gate resistance N-Ch Rg 3.8 11.6 Ω f = 1 MHz 2
Gate resistance P-Ch Rg 3.1 9.5 Ω f = 1 MHz 2
Total gate charge N-Ch Qg 0.93 1.25 nC VGS = 4.5V, VDS = 10 V, ID = 0.85 A 2
Total gate charge P-Ch Qg 1 1.33 nC VGS = -4.5 V, VDS = -10 V, ID = -0.85 A 2
Turn-on delay time N-Ch td(on) 3 6 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω 3
Turn-on delay time P-Ch td(on) 2 4 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω 3
Rise time N-Ch tr 21 27 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω 3
Rise time P-Ch tr 22 28 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω 3
Turn-off delay time N-Ch td(off) 20 25 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω 3
Turn-off delay time P-Ch td(off) 28 35 ns VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω 3
Fall time N-Ch tf 17 24 ns VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω 3
Fall time P-Ch tf 20 25 ns VDD = 10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω 3
Pulsed source current N-Ch ISM 3.3 A 3
Pulsed source current P-Ch ISM -3.3 A 3
Forward voltage N-Ch VSD 0.9 1.2 V IS = 0.85 A 3
Forward voltage P-Ch VSD -0.9 -1.2 V IS = -0.85 A 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version 12

CAD (KiCad official)

  • Symbol: SQ1563AEH-T1_GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363-6 (KiCad packages3D, STEP)
  • 3D model files: sq1563aeh-t1-ge3-etched.step / sq1563aeh-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq1563aeh-t1-ge3.step / sq1563aeh-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (15 pp, sha256 9a65a3ca4fe51bfb, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF