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MMBT9012H

Public Made by Adom

by adom

ST Semtech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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MMBT9012H

ST Semtech · Bipolar (BJT) · SOT-23

MMBT9012H from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor; the datasheet's absolute maximum emitter-base voltage (-VEBO) is 5 V.
2 Emitter passive Emitter terminal of the PNP transistor; the device absolute maximum collector current (-IC) is 500 mA.
3 Collector passive Collector terminal of the PNP transistor; absolute maximum collector-base voltage (-VCBO) is 40 V and collector-emitter voltage (-VCEO) is 30 V.

Key specifications

Parameter Value
Manufacturer ST Semtech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage -VCBO 40 V Absolute Maximum Ratings, Ta = 25 OC 1
Collector Emitter Voltage -VCEO 30 V Absolute Maximum Ratings, Ta = 25 OC 1
Emitter Base Voltage -VEBO 5 V Absolute Maximum Ratings, Ta = 25 OC 1
Collector Current -IC 500 mA Absolute Maximum Ratings, Ta = 25 OC 1
Power Dissipation Ptot 200 mW Absolute Maximum Ratings, Ta = 25 OC 1
Junction Temperature Tj 150 °C Absolute Maximum Ratings, Ta = 25 OC 1
Storage Temperature Range Tstg -55 150 °C 1
Thermal Resistance from Junction to Ambient RθJA 625 /W Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 1
DC Current Gain hFE 200 350 at -VCE = 1 V, -IC = 100 mA 2
DC Current Gain hFE 40 at -VCE = 1 V, -IC = 500 mA 2
Collector Base Cutoff Current -ICBO 100 nA at -VCB = 31 V 2
Emitter Base Cutoff Current -IEBO 100 nA at -VEB = 5.1 V 2
Collector Base Breakdown Voltage -V(BR)CBO 40 V at -IC = 100 μA 2
Collector Emitter Breakdown Voltage -V(BR)CEO 30 V at -IC = 1 mA 2
Emitter Base Breakdown Voltage -V(BR)EBO 5 V at -IE = 100 μA 2
Collector Emitter Saturation Voltage -VCE(sat) 0.7 V at -IC = 500 mA, -IB = 20 mA 2
Base Emitter Saturation Voltage -VBE(sat) 1.2 V at -IC = 500 mA, -IB = 20 mA 2
Base Emitter On Voltage -VBE(on) 0.6 0.75 V at -VCE = 1 V, -IC = 50 mA 2

CAD (KiCad official)

  • Symbol: MMBT9012H
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt9012h-etched.step / mmbt9012h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt9012h.step / mmbt9012h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ST Semtech datasheet (5 pp, sha256 59078004318f3adb, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF