CMF12N65 from Cmos, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage limited to ±30 V with threshold of 2 to 4 V at VDS = VGS, ID = 250 µA.
2	D	passive	Drain; drain-source voltage up to 650 V with 12 A continuous current (limited by junction temperature) and 48 A pulsed.
3	S	passive	Source; connects to the body diode anode and the return for drain current, rated 12 A continuous diode forward current.

Key specifications

Parameter	Value
Manufacturer	Cmos
Package	TO-220F
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Gate-Source Voltage	VGSS	-30		30	V		1
Gate Threshold Voltage	VGS(th)	2		4	V	VDS = VGS, ID = 250 µA	2
Gate-Body Leakage Current, Forward	IGSSF			100	nA	VGS = 30 V, VDS = 0 V	2
Gate-Body Leakage Current, Reverse	IGSSR			-100	nA	VGS = -30 V, VDS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 650 V, VGS = 0 V	2
Zero Gate Voltage Drain Current (high temperature)				10	µA	VDS = 520 V, TC=125℃	2
Drain-Source Diode Forward Current, Continuous	IS			12	A		2
Drain-Source Diode Forward Current, Pulsed	ISM			48	A		2
Drain-Source Diode Forward Voltage	VSD			1.4	V	VGS = 0 V, IS = 10A	2
Drain-Source Breakdown Voltage	BVDSS	650			V	VGS = 0 V, ID = 250 µA	2
Static Drain-Source On-Resistance	RDS(on)		0.69	0.75	Ω	VGS = 10 V, ID = 6A	2
Drain Current - Continuous (TC = 100℃)	ID			7.4	A	TC = 100℃	1
Drain Current - Pulsed	IDM			48	A	Note 1	1
Single Pulsed Avalanche Energy	EAS			865	mJ	Note 2	1
Repetitive Avalanche Energy	EAR			23	mJ	Note 1	1
Peak Diode Recovery dv/dt	dv/dt			4.5	V/ns	Note 3	1
Drain-Source Voltage	VDSS			650	V		1
Operating and Storage Temperature Range	TJ, TSTG	-55		150	℃		1
Maximum lead temperature for soldering purposes	TL			300	℃	1/8 from case for 5 seconds	1
Thermal Resistance, Junction-to-Case (TO-220F)	RθJC		2.33		℃/W		1
Thermal Resistance, Junction-to-Ambient	RθJA		62.5		℃/W		1
Breakdown Voltage Temperature Coefficient	BVDSS/TJ		0.7		V/℃	ID = 250 µA, Referenced to 25℃	2
Input Capacitance	Ciss		2500		pF	VDS = 25 V, VGS = 0 V, f = 1.0 MHz	2
Output Capacitance	Coss		180		pF	VDS = 25 V, VGS = 0 V, f = 1.0 MHz	2
Reverse Transfer Capacitance	Crss		20		pF	VDS = 25 V, VGS = 0 V, f = 1.0 MHz	2
Total Gate Charge	Qg		50		nC	VDS = 520 V, ID = 12A, VGS = 10 V	2
Gate-Source Charge	Qgs		8		nC	VDS = 520 V, ID = 12A, VGS = 10 V	2
Gate-Drain Charge	Qgd		20		nC	VDS = 520 V, ID = 12A, VGS = 10 V	2
Reverse Recovery Time	trr		430		ns	VGS = 0 V, IS = 12A, dIF / dt = 100 A/µs	2

CAD (KiCad official)

Symbol: CMF12N65
Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Cmos datasheet (2 pp, sha256 1a68fc9a8a87fbb3, retrieved 2026-11-07, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

CMF12N65

Verified CMF12N65

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README