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AD-SS8550-H

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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AD-SS8550-H

Changjing · Bipolar (BJT) · SOT-23

AD-SS8550-H from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor; VEBO max is -5 V and the DC current gain hFE(1) is 200-350 for the H rank at VCE = -1 V, IC = -100 mA.
2 EMITTER passive Emitter of the PNP transistor; emitter-base voltage VEBO is limited to -5 V.
3 COLLECTOR passive Collector of the PNP transistor; VCBO is -40 V, VCEO is -25 V and continuous collector current IC is -1.5 A max.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -40 V IC = -100µA, IE = 0A 2
Collector-emitter breakdown voltage V(BR)CEO -25 V IC = -0.1mA, IB = 0A 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE = -100µA, IC = 0A 2
Collector-base cut-off current ICBO -0.1 nA VCB = -40V, IE = 0A 2
Collector cut-off current ICEO -0.1 nA VCE = -20V, IB = 0A 2
Emitter-base cut-off current IEBO -0.1 nA VEB = -5V, IC = 0A 2
DC current gain, rank H (classification range 200-350) hFE(1) 200 350 - VCE = -1V, IC = -100mA 2
DC current gain hFE(2) 40 - VCE = -1V, IC = -800mA 2
Collector-emitter saturation voltage VCE(sat) -0.5 V IC = -800mA, IB = -80mA 2
Base-emitter saturation voltage VBE(sat) -1.2 V IC = -800mA, IB = -80mA 2
Base-emitter voltage VBE -1 V VCE = -1V, IC = -10mA 2
Transition frequency fT 100 MHz VCE = -10V, IC = -50mA, f = 30MHz 2
Collector output capacitance Cob 20 pF VCB = -10V, IE = 0, f = 1MHz 2
Collector-base voltage VCBO -40 V 2
Collector-emitter voltage VCEO -25 V 2
Emitter-base voltage VEBO -5 V 2
Collector continuous current IC -1.5 A 2
Collector power dissipation PC 300 mW 2
Operating junction and storage temperature range Tj, Tstg -55 150 °C 2
Thermal resistance from junction to ambient RθJA 417 °C/W 2

CAD (KiCad official)

  • Symbol: AD-SS8550-H
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ad-ss8550-h-etched.step / ad-ss8550-h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-ss8550-h.step / ad-ss8550-h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 0fd5dc00d0de8cc9, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF