component
IRF7379QTRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7379QTRPBF-VB
VBsemi Elec · MOSFETs · SO-8
IRF7379QTRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1); VDS 30 V, ID 8 A package limited. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1); absolute maximum VGS ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2); VDS -30 V, ID -8 A package limited. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2); absolute maximum VGS ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), internally common with pin 6; pulsed drain current -40 A. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), internally common with pin 5; pulsed drain current -40 A. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), internally common with pin 8; pulsed drain current 40 A. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), internally common with pin 7; pulsed drain current 40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | N-Channel | 1 | ||
| Drain-Source Voltage | VDS | -30 | V | P-Channel | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | N-Channel | 1 | |
| Continuous Drain Current | ID | 8 | A | TJ = 150 °C, TC = 25 °C, N-Channel | 1 | ||
| Continuous Drain Current | ID | -8 | A | TJ = 150 °C, TC = 25 °C, P-Channel | 1 | ||
| Continuous Drain Current | ID | 6.8 | A | TJ = 150 °C, TC = 70 °C, N-Channel | 1 | ||
| Continuous Drain Current | ID | -6.8 | A | TJ = 150 °C, TC = 70 °C, P-Channel | 1 | ||
| Continuous Drain Current | ID | -6.6 | A | TA = 25 °C, notes b, c, P-Channel | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 10 µs pulse width, N-Channel | 1 | ||
| Pulsed Drain Current | IDM | -40 | A | 10 µs pulse width, P-Channel | 1 | ||
| Source-Drain Diode Current | IS | 2.6 | A | TC = 25 °C, N-Channel | 1 | ||
| Source-Drain Diode Current | IS | -2.6 | A | TC = 25 °C, P-Channel | 1 | ||
| Source-Drain Diode Current | IS | 1.6 | A | TA = 25 °C, notes b, c, N-Channel | 1 | ||
| Source-Drain Diode Current | IS | -1.6 | A | TA = 25 °C, notes b, c, P-Channel | 1 | ||
| Single Pulse Avalanche Energy | EAS | 520 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 3.1 | W | TC = 25 °C, N-Channel | 1 | ||
| Maximum Power Dissipation | PD | 3.2 | W | TC = 25 °C, P-Channel | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 25 °C, notes b, c, N-Channel | 1 | ||
| Maximum Power Dissipation | PD | 1.28 | W | TA = 70 °C, notes b, c, N-Channel | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS = 0 V, ID = 250 µA, N-Channel | 2 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0 V, ID = -250 µA, P-Channel | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA, N-Channel | 2 | |
| Gate Threshold Voltage | VGS(th) | -2 | -1 | V | VDS = VGS, ID = -250 µA, P-Channel | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V, N-Channel | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V, N-Channel | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V, P-Channel | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V, N-Channel | 2 | ||
| On-State Drain Current | ID(on) | -20 | A | VDS = -5 V, VGS = -10 V, P-Channel | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.04 | Ω | VGS = -10 V, ID = -8 A, P-Channel | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.02 | Ω | VGS = 8 V, ID = 6.7 A, N-Channel | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.044 | Ω | VGS = -8 V, ID = -6.5 A, P-Channel | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A, N-Channel | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.05 | Ω | VGS = -4.5 V, ID = -5 A, P-Channel | 2 | ||
| Gate Resistance | Rg | 0.3 | 1 | 2.3 | Ω | f = 1 MHz, N-Channel | 2 |
| Gate Resistance | Rg | 1.2 | 5.7 | 9.6 | Ω | f = 1 MHz, P-Channel | 2 |
| Turn-On Delay Time | td(on) | 4 | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-Channel | 3 | |
| Rise Time | tr | 10 | 17 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-Channel | 3 | |
| Fall Time | tf | 5 | 9 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-Channel | 3 | |
| Turn-On Delay Time | td(on) | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Channel | 3 | |
| Rise Time | tr | 9 | 15 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Channel | 3 | |
| Turn-Off Delay Time | td(off) | 23 | 26 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Channel | 3 | |
| Fall Time | tf | 10 | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω, P-Channel | 3 | |
| Body Diode Voltage | VSD | 0.81 | 1.2 | V | IS = 5.4 A, N-Channel | 3 | |
| Body Diode Voltage | VSD | -0.77 | -1.2 | V | IS = -2 A, P-Channel | 3 | |
| Body Diode Reverse Recovery Charge | Qrr | 10 | 17 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C, N-Channel | 3 | |
| Body Diode Reverse Recovery Charge | Qrr | 29 | 47 | nC | IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C, P-Channel | 3 | |
| Maximum Junction-to-Ambient | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s, N-Channel | 1 | |
| Maximum Junction-to-Ambient | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s, P-Channel | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 120 | °C/W | Steady state, note d, N-Channel | 1 | ||
| Maximum Junction-to-Ambient (steady state) | RthJA | 110 | °C/W | Steady state, note d, P-Channel | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 30 | 40 | °C/W | Steady state, N-Channel | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 29 | 38 | °C/W | Steady state, P-Channel | 1 |
CAD (KiCad official)
- Symbol:
IRF7379QTRPBF-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7379qtrpbf-vb-etched.step/irf7379qtrpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7379qtrpbf-vb.step/irf7379qtrpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
2f97c86839653b2c, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).