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RS3400E

Public Made by Adom

by adom

REASUNOS MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

RS3400E

REASUNOS · MOSFETs · SOT-23

RS3400E from REASUNOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of 0.7 V min to 1.4 V max at VDS=VGS, ID=250µA.
2 S passive Source; connects to the body diode anode, and the continuous drain current is rated 5.8 A.
3 D passive Drain; drain-source voltage rated 30 V, continuous drain current 5.8 A and pulsed drain current 30 A.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 5.8 A 1
Pulsed Drain Current IDM 30 A Repetitive rating: pulse width limited by maximum junction temperature (note 1) 1
Power Dissipation PD 0.35 W 1
Junction Temperature TJ -55 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W Surface mounted on FR4 board, t < 5 sec (note 2) 1
Drain-source breakdown voltage V(BR)DSS 30 V VGS = 0V, ID=250µA 2
Zero gate voltage drain current IDSS 1 A VDS=24V,VGS = 0V 2
Gate-body leakage current IGSS -0.1 0.1 A VGS =±12V, VDS = 0V 2
Gate threshold voltage VGS(th) 0.7 1.4 V VDS =VGS, ID =250µA 2
Drain-source on-resistance RDS(on) 27 35 Ω VGS =10V, ID =5.8A 2
Drain-source on-resistance RDS(on) 29 40 Ω VGS =4.5V, ID =5A 2
Drain-source on-resistance RDS(on) 38 52 Ω VGS =2.5V, ID =4A 2
Forward transconductance FS 8 S VDS =5V, ID =5A 2
Input Capacitance Ciss 1050 F VDS =15V,VGS =0V,f =1MHz 2
Output Capacitance Coss 99 F 2
Reverse Transfer Capacitance Crss 77 F 2
Gate resistance Rg 3.6 Ω VDS=0V,VGS=0V, f =1MHz 2
Turn-on delay time td(on) 5 ns VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 2
Turn-on rise time tr 7 ns VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 2
Turn-off delay time td(off) 40 ns VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 2
Turn-off fall time tf 6 ns VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 2
Diode Forward voltage VDS 1 V VGS =0V, IS=1A 2

CAD (KiCad official)

  • Symbol: RS3400E
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: rs3400e-etched.step / rs3400e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs3400e.step / rs3400e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (6 pp, sha256 21adaad584c8d8c4, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF