component
FH3704B
Public Made by Adomby adom
XIN FEI HONG MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFH3704B
XIN FEI HONG · MOSFETs · TO-263
FH3704B from XIN FEI HONG, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VGSS), threshold 1.3 to 2.5 V. |
| 2 | D | passive | Drain (center pin, also the tab); 40 V VDSS, 170 A continuous at TC=25°C (package limited), 590 A pulsed. |
| 3 | S | passive | Source; continuous source current 170 A and pulsed 590 A through the body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 40 | V | 1 | |||
| Continuous drain current (TC = 25°C) | ID | 170 | A | TC = 25°C | 1 | ||
| Continuous drain current (TC = 100°C) | ID | 114 | A | TC = 100°C | 1 | ||
| Pulsed drain current | IDM | 590 | A | 1 | |||
| Gate-Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche energy | EAS | 544 | mJ | 1 | |||
| Power Dissipation | PD | 186 | W | TC = 25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS=0 V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.3 | 2.5 | V | VDS=VGS, D=250uA | 2 | |
| Drain-source leakage current | IDSS | 1 | μA | VDS=40 V, VGS=0 V, TJ = 25°C | 2 | ||
| Drain-source leakage current | IDSS | 5 | μA | VDS=40 V, VGS=0 V, TJ = 125°C | 2 | ||
| Gate leakage current Forward | IGSSF | 100 | nA | VGS=20 V, VDS=0 V | 2 | ||
| Gate leakage current Reverse | IGSSR | -100 | nA | VGS=-20 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 2.5 | 3.5 | mΩ | VGS=10 V, ID=20 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 3.5 | 6 | mΩ | VGS=4.5 V, D=10 A | 2 | |
| Forward transconductance | gfs | 26 | S | VDS =5 V , ID=50A | 2 | ||
| Continuous Source Current | IS | 170 | A | 2 | |||
| Pulsed Source Current | ISM | 590 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=50A, TJ=25℃ | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.88 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
FH3704B - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
fh3704b-etched.step/fh3704b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh3704b.step/fh3704b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XIN FEI HONG datasheet (6 pp, sha256
6bedeea31540a5fb, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).