component
AOSP21307
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownAOSP21307
Alpha & Omega Semicon · MOSFETs · SOIC-8
AOSP21307 from Alpha & Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the -30V P-channel MOSFET, with VGS rated ±25V and body-diode continuous current IS of -4A. |
| 2 | S | passive | Source terminal of the -30V P-channel MOSFET, with VGS rated ±25V and body-diode continuous current IS of -4A. |
| 3 | S | passive | Source terminal of the -30V P-channel MOSFET, with VGS rated ±25V and body-diode continuous current IS of -4A. |
| 4 | G | input | Gate terminal, with gate-source voltage rated ±25V and threshold VGS(th) between -1.3V and -2.3V. |
| 5 | D | passive | Drain terminal of the -30V P-channel MOSFET, with continuous drain current ID of -14A at TA=25°C. |
| 6 | D | passive | Drain terminal of the -30V P-channel MOSFET, with continuous drain current ID of -14A at TA=25°C. |
| 7 | D | passive | Drain terminal of the -30V P-channel MOSFET, with continuous drain current ID of -14A at TA=25°C. |
| 8 | D | passive | Drain terminal of the -30V P-channel MOSFET, with continuous drain current ID of -14A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOIC-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=25°C) | IDSS | -1 | µA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | -5 | µA | TJ=55°C, VDS=-30V, VGS=0V | 2 | ||
| Gate-Body leakage current | -100 | 100 | nA | VDS=0V, VGS=±25V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.8 | -2.3 | V | VDS=VGS, ID=-250µA | 2 |
| Static Drain-Source On-Resistance (TJ=25°C) | RDS(ON) | 9.5 | 11.5 | mΩ | VGS=-10V, ID=-14A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 13.2 | 15.8 | mΩ | TJ=125°C, VGS=-10V, ID=-14A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14.7 | 18.5 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate resistance | Rg | 4.5 | 9 | Ω | f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg (10V) | 35 | 50 | nC | VGS=-10V, VDS=-15V, ID=-14A | 2 | |
| Total Gate Charge (4.5V) | Qg (4.5V) | 17 | 25 | nC | 2 | ||
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -4 | A | 2 | |||
| Drain-Source Voltage | VDS | -30 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -25 | 25 | V | TA=25°C unless otherwise noted | 1 | |
| Continuous Drain Current (TA=25°C) | ID | -14 | A | TA=25°C | 1 | ||
| Continuous Drain Current (TA=70°C) | ID | -11 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -56 | A | Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C | 1 | ||
| Avalanche Current | IAS | 33 | A | Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C | 1 | ||
| Avalanche energy | EAS | 54 | mJ | L=0.1mH | 1 | ||
| Power Dissipation (TA=25°C) | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation (TA=70°C) | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient thermal resistance (t ≤ 10s) | RθJA | 31 | 40 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient thermal resistance (Steady-State) | RθJA | 59 | 75 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead thermal resistance (Steady-State) | RθJL | 16 | 24 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AOSP21307 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
aosp21307-etched.step/aosp21307-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aosp21307.step/aosp21307.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (5 pp, sha256
abb620320f0aff9c, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).