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VBA5415

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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VBA5415

VBsemi Elec · MOSFETs · SO-8

VBA5415 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1); the N-channel VDS is 40 V and VGS is ±20 V.
2 G1 input Gate of the N-channel MOSFET (Q1); the gate-source voltage limit is ±20 V.
3 S2 passive Source of the P-channel MOSFET (Q2); the P-channel VDS is -40 V and VGS is ±20 V.
4 G2 input Gate of the P-channel MOSFET (Q2); the gate-source voltage limit is ±20 V.
5 D2 passive Drain of the P-channel MOSFET (Q2); the P-channel VDS is -40 V.
6 D2 passive Drain of the P-channel MOSFET (Q2); the P-channel VDS is -40 V.
7 D1 passive Drain of the N-channel MOSFET (Q1); the N-channel VDS is 40 V.
8 D1 passive Drain of the N-channel MOSFET (Q1); the N-channel VDS is 40 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage (N-Channel) VGS -20 20 V 1
Gate-Source Voltage (P-Channel) VGS -20 20 V 1
Continuous Drain Current (N-Channel) ID 9 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current (P-Channel) ID -8 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current (N-Channel) ID 7.6 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current (P-Channel) ID -6.8 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current (N-Channel) ID 6.8 A TA = 25 °C; notes b, c 1
Continuous Drain Current (P-Channel) ID -5.6 A TA = 25 °C; notes b, c 1
Pulsed Drain Current (N-Channel) IDM 30 A 10 µs pulse width 1
Pulsed Drain Current (P-Channel) IDM -30 A 10 µs pulse width 1
Single Pulse Avalanche Current (N-Channel) IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-Channel) IAS -20 A L = 0.1 mH 1
Maximum Power Dissipation (N-Channel) PD 6.1 W TC = 25 °C 1
Maximum Power Dissipation (P-Channel) PD 5.2 W TC = 25 °C 1
Maximum Power Dissipation (N-Channel) PD 3 W TA = 25 °C; notes b, c 1
Maximum Power Dissipation (P-Channel) PD 3 W TA = 25 °C; notes b, c 1
Continuous Source-Drain Diode Current (N-Channel) IS 3.6 A TC = 25 °C 1
Continuous Source-Drain Diode Current (P-Channel) IS -3.6 A TC = 25 °C 1
Continuous Source-Drain Diode Current (N-Channel) IS 1.6 A TA = 25 °C; notes b, c 1
Continuous Source-Drain Diode Current (P-Channel) IS -1.6 A TA = 25 °C; notes b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-Channel) RthJA 20 32.5 °C/W t ≤ 10 s; notes b, d 1
Maximum Junction-to-Ambient (P-Channel) RthJA 27 32.5 °C/W t ≤ 10 s; notes b, d 1
Maximum Junction-to-Foot (Drain) Steady State (N-Channel) RthJF 10 20 °C/W Steady state 1
Maximum Junction-to-Foot (Drain) Steady State (P-Channel) RthJF 19 28 °C/W Steady state 1
Gate Threshold Voltage (N-Channel) VGS(th) 1 2.2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-Channel) VGS(th) -2.5 -0.9 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage (N-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Gate-Body Leakage (P-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS = 0 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS = 0 V, VGS = 0 V 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.015 Ω VGS = 10 V, ID = 6.8 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.017 Ω VGS = -10 V, ID = -8 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.018 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.022 Ω VGS = -4.5 V, ID = -5 A 2
Total Gate Charge (N-Channel) Qg 13.3 20 nC VDS = 20 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge (P-Channel) Qg 13 20 nC VDS = -20 V, VGS = -10 V, ID = -10 A 2
Total Gate Charge (N-Channel) Qg 6.5 10 nC VDS = 20 V, VGS = 4.5 V, ID = 10 A 2
Gate Resistance (N-Channel) Rg 0.3 1.3 2.6 Ω f = 1 MHz 2
Gate Resistance (P-Channel) Rg 1.3 6.4 12.8 Ω f = 1 MHz 2
Turn-On Delay Time (N-Channel) td(on) 5 10 ns N-Ch: VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Channel) td(on) 10 20 ns P-Ch: VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Rise Time (N-Channel) tr 10 20 ns N-Ch: VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Rise Time (P-Channel) tr 9 18 ns P-Ch: VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-Off Delay Time (N-Channel) td(off) 16 25 ns N-Ch: VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Channel) td(off) 50 90 ns P-Ch: VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Fall Time (N-Channel) tf 7 14 ns N-Ch: VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Fall Time (P-Channel) tf 13 26 ns P-Ch: VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-On Delay Time (N-Channel) td(on) 11 22 ns N-Ch: VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Channel) td(on) 42 75 ns P-Ch: VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 3
Rise Time (N-Channel) tr 12 22 ns N-Ch: VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
Rise Time (P-Channel) tr 40 70 ns P-Ch: VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 3
Turn-Off Delay Time (N-Channel) td(off) 17 26 ns N-Ch: VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Channel) td(off) 40 70 ns P-Ch: VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 3
Fall Time (P-Channel) tf 18 35 ns P-Ch: VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 3
Body Diode Voltage (N-Channel) VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage (P-Channel) VSD -0.77 -1.2 V IS = -2 A 3
Body Diode Reverse Recovery Time (N-Channel) trr 17 34 ns IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Time (P-Channel) trr 41 80 ns IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C 3

CAD (KiCad official)

  • Symbol: VBA5415
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: vba5415-etched.step / vba5415-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vba5415.step / vba5415.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 496d91af342dd787, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF