component
P4SMA200A
Public Made by Adomby adom
Shandong Jingdao Microelectronics ESD And Surge Protection (TVS/ESD), SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownP4SMA200A
Shandong Jingdao Microelectronics · ESD And Surge Protection (TVS/ESD) · SMA
P4SMA200A from Shandong Jingdao Microelectronics, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the unipolar P4SMA200A TVS diode, rated for 400 W peak pulse power on the 10/1000 µs waveform, with peak pulse power derated above TA = 25 °C per Fig. 2. |
| 2 | Anode | passive | Anode terminal of the unipolar P4SMA200A TVS diode, rated for 400 W peak pulse power on the 10/1000 µs waveform, with the transient clamped between anode and cathode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMA |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown voltage (min/max) | VBR | 190 | 210 | V | IT = 1 mA (Table 1, P4SMA200A unidirectional row) | 2 | |
| Maximum clamp voltage | VC | 274 | V | @ IPP = 1.5 A (Table 1 IPP for this device) | 2 | ||
| Reverse leakage current | IR | 1 | μA | @ VRWM = 171 V | 2 | ||
| Peak Pulse Power Dissipation on TA=25°C | PPPM | 400 | W | TA=25°C (Note 1,2,4, Fig1) | 1 | ||
| Peak Forward Surge Current | IFSM | 60 | A | 8.3ms single half sine-wave, JEDEC method (Note 3, Fig 4) | 1 | ||
| ESD Voltage per IEC61000-4-2, Contact | VESD1 | 30 | kV | Contact discharge per IEC61000-4-2 | 1 | ||
| ESD Voltage per IEC61000-4-2, Air | VESD2 | 30 | kV | Air discharge per IEC61000-4-2 | 1 | ||
| Operating Junction Temperature and Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Typical Thermal Resistance Junction to Ambient | RθJA | 120 | °C/W | Mounted on 5mm copper pads to each terminal (Note 2) | 1 | ||
| Reverse stand-off voltage | VRWM | 171 | V | 2 | |||
| Peak pulse current | IPP | 1.5 | A | 2 |
CAD (KiCad official)
- Symbol:
P4SMA200A - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
p4sma200a-etched.step/p4sma200a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);p4sma200a.step/p4sma200a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (4 pp, sha256
fadbe7325e3ea043, retrieved 2026-10-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).