component
AGM408MN
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM408MN
AGM-Semi · MOSFETs · SOP-8
AGM408MN from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1 marked by dot), rated for 40V drain-source and 11A continuous drain current. |
| 2 | G1 | input | Gate of MOSFET 1, with gate-source voltage limit of ±20V and threshold of 1.2V to 2.2V. |
| 3 | S2 | passive | Source of MOSFET 2, rated for 40V drain-source and 11A continuous drain current. |
| 4 | G2 | input | Gate of MOSFET 2, with gate-source voltage limit of ±20V and threshold of 1.2V to 2.2V. |
| 5 | D2 | passive | Drain of MOSFET 2 (tied with pin 6), 40V drain-source breakdown, 8.5mΩ typical RDS(on) at VGS=10V. |
| 6 | D2 | passive | Drain of MOSFET 2 (tied with pin 5), 40V drain-source breakdown, 8.5mΩ typical RDS(on) at VGS=10V. |
| 7 | D1 | passive | Drain of MOSFET 1 (tied with pin 8), 40V drain-source breakdown, 8.5mΩ typical RDS(on) at VGS=10V. |
| 8 | D1 | passive | Drain of MOSFET 1 (tied with pin 7), 40V drain-source breakdown, 8.5mΩ typical RDS(on) at VGS=10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 11 | A | Ta=25℃ | 1 | ||
| Drain Current-Continuous | ID | 5 | A | Ta=100℃ | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | Ta=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | Ta=100℃ | 1 | ||
| Avalanche energy | EAS | 64 | mJ | TJ=25℃,VDD=25V,Vgs=10V,ID=16A,L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 8.5 | 11 | mΩ | VGS=10V, ID=10A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 16 | 20 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 11 | A | 2 | |||
| Forward on Voltage | VSD | 0.8 | 1.2 | V | VGS=0V,IS=10A | 2 | |
| Forward Transconductance | gFS | 5.2 | S | VDS=5V,ID=5A | 2 | ||
| Input Capacitance | Ciss | 870 | pF | VDS=20V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 265 | pF | VDS=20V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 20 | pF | VDS=20V,VGS=0V, F=1MHZ | 2 | ||
| Turn-on Delay Time | td(on) | 5.6 | nS | VGS=10V,VDS=20V, ID=10A,RGEN=6Ω | 2 | ||
| Turn-on Rise Time | tr | 29 | nS | VGS=10V,VDS=20V, ID=10A,RGEN=6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 15 | nS | VGS=10V,VDS=20V, ID=10A,RGEN=6Ω | 2 | ||
| Turn-Off Fall Time | tf | 4.6 | nS | VGS=10V,VDS=20V, ID=10A,RGEN=6Ω | 2 | ||
| Total Gate Charge | Qg | 13 | nC | VGS=10V, VDS=20V, ID=10A | 2 | ||
| Gate-Source Charge | Qgs | 2.7 | nC | VGS=10V, VDS=20V, ID=10A | 2 | ||
| Gate-Drain Charge | Qgd | 1.6 | nC | VGS=10V, VDS=20V, ID=10A | 2 |
CAD (KiCad official)
- Symbol:
AGM408MN - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm408mn-etched.step/agm408mn-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm408mn.step/agm408mn.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
29805b842e11b356, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).