component
MBR120LSFT3G
Public Made by Adomby adom
onsemi Schottky Barrier Diodes (SBD), SOD-123FL. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMBR120LSFT3G
onsemi · Schottky Barrier Diodes (SBD) · SOD-123FL
MBR120LSFT3G from onsemi, in a SOD-123FL. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the cathode band polarity designator; the device blocks 20 V DC reverse voltage (VR) and conducts 1.0 A average rectified forward current. |
| 2 | A | passive | Anode of the Schottky barrier rectifier, with a maximum forward voltage of 0.45 V at IF = 1.0 A and TJ = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOD-123FL |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Instantaneous Forward Voltage | VF | 0.34 | V | IF = 0.1 A, TJ = 25°C | 3 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.45 | V | IF = 1.0 A, TJ = 25°C | 3 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.65 | V | IF = 3.0 A, TJ = 25°C | 3 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.26 | V | IF = 0.1 A, TJ = 85°C | 3 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.415 | V | IF = 1.0 A, TJ = 85°C | 3 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.67 | V | IF = 3.0 A, TJ = 85°C | 3 | ||
| Maximum Instantaneous Reverse Current | IR | 0.4 | mA | VR = 20 V, TJ = 25°C | 3 | ||
| Maximum Instantaneous Reverse Current | IR | 0.1 | mA | VR = 10 V, TJ = 25°C | 3 | ||
| Maximum Instantaneous Reverse Current | IR | 25 | mA | VR = 20 V, TJ = 85°C | 3 | ||
| Maximum Instantaneous Reverse Current | IR | 18 | mA | VR = 10 V, TJ = 85°C | 3 | ||
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM, VRWM, VR | 20 | V | 3 | |||
| Average Rectified Forward Current | IO | 1 | A | At Rated VR, TL = 115°C | 3 | ||
| Peak Repetitive Forward Current | IFRM | 2 | A | At Rated VR, Square Wave, 100 kHz, TL = 110°C | 3 | ||
| Non-Repetitive Peak Surge Current | IFSM | 50 | A | halfwave, single phase, 60 Hz | 3 | ||
| Storage Temperature | Tstg | -55 | 150 | °C | 3 | ||
| Operating Junction Temperature | TJ | -55 | 125 | °C | 3 | ||
| Voltage Rate of Change | dv/dt | 10000 | V/s | Rated VR, TJ = 25°C | 3 | ||
| Thermal Resistance Junction-to-Lead | Rtjl | 26 | °C/W | Note 1: minimum recommended pad size, FR4 | 3 | ||
| Thermal Resistance Junction-to-Lead | Rtjl | 21 | °C/W | Note 2: 1 in. copper pad (Cu area 700 mm2) | 3 | ||
| Thermal Resistance Junction-to-Ambient | Rtja | 325 | °C/W | Note 1: minimum recommended pad size, FR4 | 3 | ||
| Thermal Resistance Junction-to-Ambient | Rtja | 82 | °C/W | Note 2: 1 in. copper pad (Cu area 700 mm2) | 3 |
CAD (KiCad official)
- Symbol:
MBR120LSFT3G - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123FL (KiCad packages3D, STEP)
- 3D model files:
mbr120lsft3g-etched.step/mbr120lsft3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mbr120lsft3g.step/mbr120lsft3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
f6c2fddd59c5b517, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).