G020N03D5 from GOFORD, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source of the N-channel MOSFET, one of three source pins (1-3); body diode continuous current rated 140 A.
2	S	passive	Source of the N-channel MOSFET, one of three source pins (1-3); body diode continuous current rated 140 A.
3	S	passive	Source of the N-channel MOSFET, one of three source pins (1-3); body diode continuous current rated 140 A.
4	G	input	Gate of the N-channel MOSFET with gate-source voltage limited to ±20 V and threshold of 1.0 V min to 2.0 V max at 250 µA.
5	D	passive	Drain of the MOSFET, one of four drain pins (5-8) rated for VDS 30 V and 140 A continuous drain current.
6	D	passive	Drain of the MOSFET, one of four drain pins (5-8) rated for VDS 30 V and 140 A continuous drain current.
7	D	passive	Drain of the MOSFET, one of four drain pins (5-8) rated for VDS 30 V and 140 A continuous drain current.
8	D	passive	Drain of the MOSFET, one of four drain pins (5-8) rated for VDS 30 V and 140 A continuous drain current.
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	GOFORD
Package	DFN5X6-8L
Category	Triode/MOS Tube/Transistor
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Gate-Source Threshold Voltage	VGS(th)	1	1.5	2	V	VDS = VGS, ID = 250µA	2
Drain-Source Breakdown Voltage	V(BR)DSS	30			V	VGS = 0V, ID = 250µA	2
Zero Gate Voltage Drain Current	IDSS			1	μA	VDS = 30V, VGS = 0V	2
Gate-Source Leakage	IGSS	-100		100	nA	VGS = ±20V	2
Drain-Source On-Resistance	RDS(on)		1.5	2	mΩ	VGS = 10V, ID = 50A	2
Drain-Source On-Resistance	RDS(on)		2.1	3	mΩ	VGS = 4.5V, ID = 50A	2
Continuous Body Diode Current	IS			140	A	TC = 25ºC	2
Body Diode Voltage	VSD			1.2	V	TJ = 25ºC, ISD = 50A, VGS = 0V	2
Drain-Source Voltage	VDS			30	V	TC = 25ºC	1
Continuous Drain Current	ID			140	A	TC = 25ºC	1
Pulsed Drain Current	IDM			560	A		1
Gate-Source Voltage	VGS	-20		20	V	TC = 25ºC	1
Power Dissipation	PD			83	W	TC = 25ºC	1
Single Pulse Avalanche Energy	EAS			144	mJ	TC = 25ºC	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	ºC		1
Thermal Resistance, Junction-to-Ambient	RthJA			50	ºC/W		1
Maximum Junction-to-Case	RthJC			1.5	ºC/W		1

CAD (KiCad official)

Symbol: G020N03D5
Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
3D model: DFN5X6-8L (KiCad packages3D, STEP)
3D model files: g020n03d5-etched.step / g020n03d5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g020n03d5.step / g020n03d5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: GOFORD datasheet (6 pp, sha256 7990e918c17e3209, retrieved 2026-10-30, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

G020N03D5

Verified G020N03D5

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README