component
IPP200N15N3G
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPP200N15N3G
Infineon Technologies · MOSFETs · TO-220-3
IPP200N15N3G from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2 V min to 4 V max at 90 µA. |
| 2 | D | passive | Drain pin, also connected to the mounting tab; rated for 150 V VDS and 50 A continuous drain current at TC=25 °C. |
| 3 | S | passive | Source pin; carries up to 50 A continuous current and the body diode continuous forward current of 50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 50 | A | TC=25 °C | 1 | ||
| Continuous drain current | ID | 40 | A | TC=100 °C | 1 | ||
| Pulsed drain current | ID,pulse | 200 | A | TC=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 170 | mJ | ID=50 A, RGS=25 W | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=50 A, VDS=120 V, di/dt=100 A/µs, Tj,max=175 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 150 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction - case | RthJC | 1 | K/W | 2 | |||
| Thermal resistance, junction - ambient | RthJA | 75 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 50 | K/W | 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 150 | V | VGS=0 V, ID=1 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=90 µA | 2 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=120 V, VGS=0 V, Tj=25 °C | 2 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=120 V, VGS=0 V, Tj=125 °C | 2 | |
| Gate-source leakage current | IGSS | 1 | 100 | nA | VGS=20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance | RDS(on) | 16 | 20 | mW | VGS=10 V, ID=50 A | 2 | |
| Transconductance | gfs | 29 | 57 | S | /VDS/>2/ID/RDS(on)max, ID=50 A | 2 | |
| Turn-on delay time | td(on) | 14 | 21 | ns | VDD=75 V, VGS=10 V, ID=50 A, RG,ext=1.6 W | 3 | |
| Rise time | tr | 11 | 17 | ns | VDD=75 V, VGS=10 V, ID=50 A, RG,ext=1.6 W | 3 | |
| Turn-off delay time | td(off) | 23 | 35 | ns | VDD=75 V, VGS=10 V, ID=50 A, RG,ext=1.6 W | 3 | |
| Fall time | tf | 6 | 9 | ns | VDD=75 V, VGS=10 V, ID=50 A, RG,ext=1.6 W | 3 | |
| Gate to source charge | Qgs | 10 | 14 | nC | VDD=75 V, ID=50 A, VGS=0 to 10 V | 3 | |
| Gate to drain charge | Qgd | 4 | 6 | nC | VDD=75 V, ID=50 A, VGS=0 to 10 V | 3 | |
| Switching charge | Qsw | 9 | 13 | nC | VDD=75 V, ID=50 A, VGS=0 to 10 V | 3 | |
| Gate charge total | Qg | 23 | 31 | nC | VDD=75 V, ID=50 A, VGS=0 to 10 V | 3 | |
| Output charge | Qoss | 60 | 79 | nC | VDD=75 V, VGS=0 V | 3 | |
| Diode continuous forward current | IS | 50 | A | 3 | |||
| Diode pulse current | IS,pulse | 220 | A | 3 | |||
| Diode forward voltage | VSD | 1 | 1.2 | V | VGS=0 V, IF=50 A, Tj=25 °C | 3 | |
| Input capacitance | Ciss | 1820 | pF | VGS=0 V, VDS=75 V, f=1 MHz | 3 | ||
| Output capacitance | Coss | 214 | pF | VGS=0 V, VDS=75 V, f=1 MHz | 3 | ||
| Reverse transfer capacitance | Crss | 5 | pF | VGS=0 V, VDS=75 V, f=1 MHz | 3 | ||
| Gate plateau voltage | Vplateau | 5.7 | V | VDD=75 V, ID=50 A, VGS=0 to 10 V | 3 | ||
| Gate resistance | RG | 2.4 | W | 2 | |||
| Reverse recovery time | trr | 106 | ns | VR=75 V, IF=IS, diF/dt=100 A/µs, TC=25 °C | 3 | ||
| Reverse recovery charge | Qrr | 332 | nC | VR=75 V, IF=IS, diF/dt=100 A/µs, TC=25 °C | 3 |
CAD (KiCad official)
- Symbol:
IPP200N15N3G - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ipp200n15n3g-etched.step/ipp200n15n3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp200n15n3g.step/ipp200n15n3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (12 pp, sha256
d4924d66c7ee9886, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).