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Contents

README

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TM50P03NF

Tritech MOS · MOSFETs · DFN-8(5x6)

TM50P03NF from Tritech MOS, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, pin 1 at the marked corner; VDS = -30V, ID = -50A device.
2 S passive Source of the P-channel MOSFET, tied with the other source pins.
3 S passive Source of the P-channel MOSFET, tied with the other source pins.
4 G input Gate of the P-channel MOSFET; absolute maximum VGS is ±25V, with threshold of -1.0V to -2.5V at ID = -250μA.
5 D passive Drain of the P-channel MOSFET; VDS rating is -30V, continuous ID -50A at TC=25℃.
6 D passive Drain of the P-channel MOSFET, tied with the other drain pins.
7 D passive Drain of the P-channel MOSFET, tied with the other drain pins.
8 D passive Drain of the P-channel MOSFET, tied with the other drain pins.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID@TC=25℃ -50 A VGS @ -10V 1
Continuous Drain Current ID@TC=100℃ -32 A VGS @ -10V 1
Pulsed Drain Current IDM -150 A 1
Single Pulse Avalanche Energy EAS 125 mJ TJ=25℃, VGS=10V, RG=25Ω, L=0.5mH, IAS=-12.7A 1
Avalanche Current IAS -50 A 1
Total Power Dissipation (10s) PD@TA=25℃ 5 W TA=25℃, 10s 1
Total Power Dissipation (steady state) PD@TA=25℃ 2 W TA=25℃, steady state 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 8.7 14 mΩ VGS= -10V, ID= -10A 2
Static Drain-Source on-Resistance RDS(on) 17 24 mΩ VGS= -4.5V, ID= -5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -50 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -60 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -15A 2

CAD (KiCad official)

  • Symbol: TM50P03NF
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: tm50p03nf-etched.step / tm50p03nf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm50p03nf.step / tm50p03nf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (6 pp, sha256 c6a5259733f77e93, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF