component

ZXTN2020FTA

Public Made by Adom

by adom

Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorszxtn2020ftafactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

ZXTN2020FTA

Diodes Incorporated · Bipolar Transistors - BJT · SOT-23

ZXTN2020FTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 7V and continuous base current IB max 1A.
2 E passive Emitter of the NPN transistor; emitter-base voltage VEBO max 7V.
3 C passive Collector of the NPN transistor; VCEO 100V, VCBO 160V, continuous IC 4A, peak ICM 12A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 160 V 2
Collector-emitter voltage V(BR)CEV 160 V 2
Collector-emitter voltage VCEO 100 V 2
Emitter-base voltage VEBO 7 V 2
Peak pulse current ICM 12 A 2
Continuous collector current IC 4 A (a) 2
Base current IB 1 A 2
Power dissipation PD 1 W TA=25°C (a), derating 8 mW/°C 2
Power dissipation PD 1.2 W TA=25°C (b), derating 9.6 mW/°C 2
Power dissipation PD 1.56 W TA=25°C (c), derating 12.5 mW/°C 2
Operating and storage temperature Tj:Tstg -55 150 °C 2
Junction to ambient (a) RθJA 125 °C/W 18mm x 18mm x 1.6mm FR4, 2 oz copper, still air 2
Junction to ambient (b) RθJA 104 °C/W 30mm x 30mm x 1.6mm FR4, 2 oz copper, still air 2
Junction to ambient (c) RθJA 80 °C/W as (b), t<5secs 2
Collector-base breakdown voltage V(BR)CBO 160 200 V IC=100µA 4
Collector-emitter breakdown voltage V(BR)CEV 160 200 V IC=1µA, -1V<VBE<+0.3V 4
Collector-emitter breakdown voltage V(BR)CEO 100 115 V IC=10mA (a) 4
Collector-emitter cut-off current ICEV 1 20 nA VCES=128V, VBE=-1V 4
Collector-base cut-off current ICBO 1 20 nA VCB=128V 4
Emitter-base cut-off current IEBO 1 10 nA VEB=6V 4
Static forward current transfer ratio HFE 100 220 300 IC=10mA, VCE=2V(a) 4
Static forward current transfer ratio HFE 100 200 IC=1A, VCE=2V(a) 4
Static forward current transfer ratio HFE 35 60 IC=4A, VCE=2V(a) 4
Static forward current transfer ratio HFE 13 IC=10A, VCE=2V(a) 4
Collector-emitter saturation voltage VCE(sat) 20 30 mV IC=0.1A, IB=5mA(a) 4
Collector-emitter saturation voltage VCE(sat) 40 50 mV IC=1A, IB=100mA(a) 4
Collector-emitter saturation voltage VCE(sat) 85 105 mV IC=2A, IB=100mA(a) 4
Collector-emitter saturation voltage VCE(sat) 120 150 mV IC=4A, IB=400mA(a) 4
Base-emitter saturation voltage VBE(sat) 0.94 1.05 V IC=4A, IB=400mA(a) 4
Base-emitter turn-on voltage VBE(on) 0.84 0.94 V IC=4A, VCE=2V(a) 4
Transition frequency fT 130 MHz Ic=100mA, VCE=10V, f=50MHz 4
Output capacitance Cobo 22 pF VCB=10V, f=1MHz 4
Turn-on time t(on) 37 ns VCC=10V, IC=1A, IB1=IB2=100mA 4
Turn-off time t(off) 910 ns VCC=10V, IC=1A, IB1=IB2=100mA 4

CAD (KiCad official)

  • Symbol: ZXTN2020FTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxtn2020fta-etched.step / zxtn2020fta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn2020fta.step / zxtn2020fta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 d7e430e7bbc7b660, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF