component

HBSD235CH6327

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-363(SC-70-6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshbsd235ch6327factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HBSD235CH6327

HXY MOSFET · MOSFETs · SOT-363(SC-70-6)

HBSD235CH6327 from HXY MOSFET, in a SOT-363(SC-70-6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (VDS 20V, ID 0.75A, RDS(ON) < 380mΩ at VGS=4.5V).
2 G1 input Gate of the N-channel MOSFET (VGS ±12V max, threshold 0.35 to 1.1V).
3 D2 passive Drain of the P-channel MOSFET (VDS -20V, ID -0.66A, RDS(ON) < 570mΩ at VGS=-4.5V).
4 S2 passive Source of the P-channel MOSFET (VDS -20V, ID -0.66A).
5 G2 input Gate of the P-channel MOSFET (VGS ±12V max, threshold -0.35 to -1.1V).
6 D1 passive Drain of the N-channel MOSFET (VDS 20V, ID 0.75A, pulsed 1.8A).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363(SC-70-6)
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-ch) VDS 20 V TC=25℃ 1
Drain-Source Voltage (P-ch) VDS -20 V TC=25℃ 1
Gate-Source Voltage (N-ch) VGS -12 12 V ±12 V 1
Gate-Source Voltage (P-ch) VGS -12 12 V ±12 V 1
Continuous Drain Current (N-ch) ID 0.75 A TA=25℃, VGS @ 10V 1
Continuous Drain Current (P-ch) ID -0.66 A TA=25℃, VGS @ 10V 1
Pulsed Drain Current (N-ch) IDM 1.8 A 1
Pulsed Drain Current (P-ch) IDM -1.2 A 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 833 ℃/W 1
N-ch Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250µA 2
N-ch Zero gate voltage drain current IDSS 1 µA VDS =20V,VGS = 0V 2
N-ch Gate-body leakage current IGSS -20 20 uA VGS =±10V, VDS = 0V 2
N-ch Gate threshold voltage VGS(th) 0.35 1.1 V VDS =VGS, ID =250µA 2
N-ch Drain-source on-resistance RDS(on) 380 mΩ VGS =4.5V, ID =0.65A 2
N-ch Drain-source on-resistance RDS(on) 450 mΩ VGS =2.5V, ID =0.55A 2
N-ch Drain-source on-resistance RDS(on) 800 mΩ VGS =1.8V, ID =0.45A 2
N-ch Diode forward voltage VSD 1.2 V IS=0.15A, VGS = 0V 2
N-ch Input Capacitance Ciss 79 120 pF VDS =16V,VGS =0V,f =1MHz 2
N-ch Output Capacitance Coss 13 20 pF VDS =16V,VGS =0V,f =1MHz 2
N-ch Reverse Transfer Capacitance Crss 9 15 pF VDS =16V,VGS =0V,f =1MHz 2
P-ch Drain-source breakdown voltage V(BR)DSS -20 V VGS = 0V, ID =-250µA 2
P-ch Zero gate voltage drain current IDSS -1 µA VDS =-20V,VGS = 0V 2
P-ch Gate-body leakage current IGSS -20 20 uA VGS =±10V, VDS = 0V 2
P-ch Gate threshold voltage VGS(th) -1.1 -0.35 V VDS =VGS, ID =-250µA 2
P-ch Drain-source on-resistance RDS(on) 570 mΩ VGS =-4.5V, ID =-1A 2
P-ch Drain-source on-resistance RDS(on) 700 mΩ VGS =-2.5V, ID =-0.8A 2
P-ch Drain-source on-resistance RDS(on) 950 mΩ VGS =-1.8V, ID =-0.5A 2
P-ch Diode forward voltage VSD -1.2 V IS=-0.5A, VGS = 0V 2
P-ch Input Capacitance Ciss 113 170 pF VDS =-16V,VGS =0V,f =1MHz 2
P-ch Output Capacitance Coss 15 25 pF VDS =-16V,VGS =0V,f =1MHz 2
P-ch Reverse Transfer Capacitance Crss 9 15 pF VDS =-16V,VGS =0V,f =1MHz 2
N-ch Forward transconductance gFS 1.6 S VDS =10V, ID =0.8A 2
P-ch Forward transconductance gFS 1.2 S VDS =-10V, ID =-0.54A 2
N-ch Turn-on delay time td(on) 6.7 ns VGS=4.5V,VDS=10V,ID=500mA,RGEN=10Ω 2
N-ch Turn-on rise time tr 4.8 ns VGS=4.5V,VDS=10V,ID=500mA,RGEN=10Ω 2
N-ch Turn-off delay time td(off) 17.3 ns VGS=4.5V,VDS=10V,ID=500mA,RGEN=10Ω 2
N-ch Turn-off fall time tf 7.4 ns VGS=4.5V,VDS=10V,ID=500mA,RGEN=10Ω 2
P-ch Turn-on delay time td(on) 9 ns VGS=-4.5V,VDS=-10V,ID=-200mA,RGEN=10Ω 2
P-ch Turn-on rise time tr 5.8 ns VGS=-4.5V,VDS=-10V,ID=-200mA,RGEN=10Ω 2
P-ch Turn-off delay time td(off) 32.7 ns VGS=-4.5V,VDS=-10V,ID=-200mA,RGEN=10Ω 2
P-ch Turn-off fall time tf 20.3 ns VGS=-4.5V,VDS=-10V,ID=-200mA,RGEN=10Ω 2

CAD (KiCad official)

  • Symbol: HBSD235CH6327
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363(SC-70-6) (KiCad packages3D, STEP)
  • 3D model files: hbsd235ch6327-etched.step / hbsd235ch6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hbsd235ch6327.step / hbsd235ch6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 d73f588c6ba5c3da, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF