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Contents

README

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STW10NK80Z

STMicroelectronics · MOSFETs · TO-247-3

STW10NK80Z from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the Zener-protected N-channel SuperMESH MOSFET, rated for a gate-source voltage of ±30 V with a 4 kV human body model ESD rating.
2 D passive Drain of the MOSFET, also connected to the TAB (heat sink), rated for 800 V drain-source voltage and 9 A continuous drain current at TC = 25 °C.
3 S passive Source of the MOSFET, carrying the source-drain diode rated for 9 A continuous and 36 A pulsed source-drain current.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STW10NK80Z
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: stw10nk80z-etched.step / stw10nk80z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stw10nk80z.step / stw10nk80z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 ad8cf4ebe66b66c7, retrieved 2026-10-08, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF