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Contents

README

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MMBT6428LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT6428LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN amplifier transistor; the datasheet gives no separate pin-level limit, and the device is rated for VCEO 45-50 Vdc, VCBO 55-60 Vdc, VEBO 6.0 Vdc and IC 200 mAdc maximum.
2 EMITTER passive Emitter terminal of the NPN amplifier transistor; the datasheet gives no separate pin-level limit, and the device is rated for VEBO 6.0 Vdc and IC 200 mAdc maximum.
3 COLLECTOR passive Collector terminal of the NPN amplifier transistor; the datasheet gives no separate pin-level limit, and the device is rated for VCEO 45-50 Vdc, VCBO 55-60 Vdc and IC 200 mAdc maximum.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 1.0 mAdc, IB = 0 (MMBT6428) 2
Collector-Base Breakdown Voltage V(BR)CBO 60 Vdc IC = 0.1 mAdc, IE = 0 (MMBT6428) 2
Collector Cutoff Current ICES 0.1 Adc VCE = 30 Vdc 2
Collector Cutoff Current ICBO 0.01 Adc VCB = 30 Vdc, IE = 0 2
Emitter Cutoff Current IEBO 0.01 Adc VEB = 5.0 Vdc, IC = 0 2
DC Current Gain hFE 250 - IC = 0.01 mAdc, VCE = 5.0 Vdc (MMBT6428) 2
Collector-Emitter Saturation Voltage VCE(sat) 0.2 Vdc IC = 10 mAdc, IB = 0.5 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.6 Vdc IC = 100 mAdc, IB = 5.0 mAdc 2
Base-Emitter On Voltage VBE(on) 0.56 0.66 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc 2
Current-Gain - Bandwidth Product fT 100 700 MHz IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 3 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 8 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Collector-Emitter Voltage VCEO 50 Vdc MMBT6428 1
Collector-Base Voltage VCBO 60 Vdc MMBT6428 1
Emitter-Base Voltage VEBO 6 Vdc 1
Collector Current - Continuous IC 200 mAdc 1
Total Device Dissipation PD 225 mW FR-5 board, TA = 25°C 1
Total Device Dissipation PD 300 mW Alumina substrate, TA = 25°C 1
Derate above 25°C PD 1.8 mW/°C FR-5 board, above 25°C 1
Derate above 25°C PD 2.4 mW/°C Alumina substrate, above 25°C 1
Thermal Resistance, Junction-to-Ambient RθJA 556 °C/W FR-5 board 1
Thermal Resistance, Junction-to-Ambient RθJA 417 °C/W Alumina substrate 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMBT6428LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt6428lt1g-etched.step / mmbt6428lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt6428lt1g.step / mmbt6428lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 e461d074b2e84418, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF