component
STP4925A
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP4925A
UMW · MOSFETs · SOP-8
STP4925A from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1; the datasheet rates the source current (diode conduction) IS at -2.3 A and VDSS at -30 V. |
| 2 | G1 | input | Gate terminal of MOSFET 1; gate-source voltage VGSS is limited to ±20 V. |
| 3 | S2 | passive | Source terminal of MOSFET 2; the datasheet rates the source current (diode conduction) IS at -2.3 A and VDSS at -30 V. |
| 4 | G2 | input | Gate terminal of MOSFET 2; gate-source voltage VGSS is limited to ±20 V. |
| 5 | D1 | passive | Drain terminal of one of the two MOSFETs; drain-source voltage VDSS is -30 V and continuous drain current ID is -7.2 A at TA=25°C. |
| 6 | D1 | passive | Drain terminal of one of the two MOSFETs; drain-source voltage VDSS is -30 V and continuous drain current ID is -7.2 A at TA=25°C. |
| 7 | D2 | passive | Drain terminal of one of the two MOSFETs; drain-source voltage VDSS is -30 V and continuous drain current ID is -7.2 A at TA=25°C. |
| 8 | D2 | passive | Drain terminal of one of the two MOSFETs; drain-source voltage VDSS is -30 V and continuous drain current ID is -7.2 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250µA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 2 | ||
| Zero gate voltage drain current (TJ=55°C) | IDSS | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 2 | ||
| Drain-source On Resistance | RDS(ON) | 25 | mΩ | VGS=-10V, ID=-7.2A | 2 | ||
| Drain-source On Resistance | RDS(ON) | 32 | mΩ | VGS=-4.5V, ID=-5.6A | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250µA | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | IS=-2.3A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDSS | -30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | -50 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | -2.3 | A | 1 | |||
| Continuous Drain Current | ID | -7.2 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -5.6 | A | TA=70°C | 1 | ||
| Power Dissipation | PD | 2.8 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.8 | W | TA=70°C | 1 | ||
| Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 70 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
STP4925A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
stp4925a-etched.step/stp4925a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp4925a.step/stp4925a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (7 pp, sha256
a325984b32a778f6, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).