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IRF7105TRPBF-JSM
Public Made by Adomby adom
JSMSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7105TRPBF-JSM
JSMSEMI · MOSFETs · SOP-8
IRF7105TRPBF-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the n-channel MOSFET (30V VDS, 7.2A ID at VGS=10V, ±20V VGS max). |
| 2 | G2 | input | Gate of the n-channel MOSFET (±20V VGS max, VGS(th) 1.0 to 2.6V). |
| 3 | S1 | passive | Source of the p-channel MOSFET (-30V VDS, -6.8A ID at VGS=-10V, ±20V VGS max). |
| 4 | G1 | input | Gate of the p-channel MOSFET (±20V VGS max, VGS(th) -1.0 to -2.4V). |
| 5 | D1 | passive | Drain of the p-channel MOSFET (-30V VDS max, tied internally to pin 6), -6.8A continuous at TA=25°C. |
| 6 | D1 | passive | Drain of the p-channel MOSFET (-30V VDS max, tied internally to pin 5), -40A pulsed. |
| 7 | D2 | passive | Drain of the n-channel MOSFET (30V VDS max, tied internally to pin 8), 7.2A continuous at TA=25°C. |
| 8 | D2 | passive | Drain of the n-channel MOSFET (30V VDS max, tied internally to pin 7), 64A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (n-channel) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (p-channel) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (n-channel) | ID | 7.2 | A | TA=25°C | 1 | ||
| Continuous Drain Current (n-channel) | ID | 6.2 | A | TA=70°C | 1 | ||
| Continuous Drain Current (p-channel) | ID | -6.8 | A | TA=25°C | 1 | ||
| Continuous Drain Current (p-channel) | ID | -5.5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current (n-channel) | IDM | 64 | A | 1 | |||
| Pulsed Drain Current (p-channel) | IDM | -40 | A | 1 | |||
| Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.44 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10s), n-channel | RθJA | 50 | 62.5 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient (steady-state), n-channel | RθJA | 80 | 100 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead (steady-state), n-channel | RθJL | 32 | 40 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Ambient (t ≤ 10s), p-channel | RθJA | 50 | 62.5 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient (steady-state), p-channel | RθJA | 80 | 100 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead (steady-state), p-channel | RθJL | 32 | 40 | °C/W | Steady-State | 1 | |
| Gate Threshold Voltage (n-channel) | VGS(th) | 1 | 1.5 | 2.6 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance (n-channel) | RDS(ON) | 18.7 | 28 | mΩ | VGS=10V, ID=7.2A | 2 | |
| Static Drain-Source On-Resistance (n-channel) | RDS(ON) | 24.8 | 36 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Static Drain-Source On-Resistance (n-channel) | RDS(ON) | 25 | 32 | mΩ | TJ=125°C | 2 | |
| Diode Forward Voltage (n-channel) | VSD | 0.74 | 1 | V | IS=2.5A, VGS=0V | 2 | |
| Total Gate Charge (10V) (n-channel) | Qg | 7.2 | 11 | nC | VGS=10V, VDS=15V, ID=7.2A | 2 | |
| Body Diode Reverse Recovery Time (n-channel) | trr | 10.5 | 12.6 | ns | IF=7.2A, dI/dt=100A/µs | 2 | |
| Input Capacitance (n-channel) | Ciss | 373 | 448 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Gate Resistance (n-channel) | Rg | 1.8 | 2.8 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Gate Threshold Voltage (p-channel) | VGS(th) | -1 | -1.5 | -2.4 | V | VDS=VGS, ID=-250µA | 5 |
| Gate-Body Leakage Current (p-channel) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 5 | |
| Static Drain-Source On-Resistance (p-channel) | RDS(ON) | 36 | 48 | mΩ | VGS=-10V, ID=-6.3A | 5 | |
| Static Drain-Source On-Resistance (p-channel) | RDS(ON) | 48 | 58 | mΩ | VGS=-4.5V, ID=-3.5A | 5 | |
| Diode Forward Voltage (p-channel) | VSD | -0.8 | -1 | V | IS=-3.5A, VGS=0V | 5 | |
| Total Gate Charge (10V) (p-channel) | Qg | 13.6 | 16 | nC | VGS=-10V, VDS=-15V, ID=-5.3A | 5 | |
| Gate Resistance (p-channel) | Rg | 3.2 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 5 |
CAD (KiCad official)
- Symbol:
IRF7105TRPBF-JSM - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7105trpbf-jsm-etched.step/irf7105trpbf-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7105trpbf-jsm.step/irf7105trpbf-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (8 pp, sha256
e3281a5e2beab9cf, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).